2002
DOI: 10.1016/s0925-4005(02)00009-6
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Reactive R.F. magnetron sputtering deposition of WO3 thin films

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Cited by 62 publications
(30 citation statements)
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“…roughness is measured¨14.3 nm for the annealed WO 3 film. The sharp increase in the roughness for the annealed film as compared to the ''as deposited'' film can be due to their crystallization process, as reported by others [10,11,18,25].…”
Section: Afm Surface Morphologysupporting
confidence: 72%
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“…roughness is measured¨14.3 nm for the annealed WO 3 film. The sharp increase in the roughness for the annealed film as compared to the ''as deposited'' film can be due to their crystallization process, as reported by others [10,11,18,25].…”
Section: Afm Surface Morphologysupporting
confidence: 72%
“…It has been reported that the suitable condition to obtain WO 3 thin film with stoichiometric composition and good crystallinity is annealing ''as deposited'' WO 3 films at T = 400 -C [11,25]. Thus, in this study, after the deposition process, all the deposited films were annealed at 400 -C in air for a period of 60 min.…”
Section: Methodsmentioning
confidence: 99%
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“…In a previous work, influence of the preparation conditions upon the composition, the structure and the morphology of WO 3 thin films were studied [10]. The choice of a SiO 2 /Si substrate for the fabrication of the gas microsensors had been undertaken.…”
Section: Introductionmentioning
confidence: 99%