Reactive scattering study of etching dynamics: Cl2 on GaAs(100)

Bond, Peter; Brier, P.N.; Fletcher, J.; Jia, W.J.; Price, Huw; Gorry, P.A.

doi:10.1016/s0039-6028(98)00715-8

Cited by 17 publications

(22 citation statements)

References 70 publications

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“…The constant σ 0 is borrowed from the Eley–Rideal mechanism for surface reactions; in the present study and elsewhere, it is used simply as a proportionality constant in the pre-exponential. The effective activation energy E eff in ref was modeled as a quadratic polynomial that decreased monotonically within a limited range of θ. We have solved eq numerically using a linear expression E eff = E 0 + βθ and fit the result to the data using three global parameters: σ 0 ϕ, E 0 , and β.…”

Section: Discussionmentioning

confidence: 99%

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Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

2020

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Atomic layer deposition (ALD) of Al 2 O 3 using trimethylaluminum and H 2 O is known to proceed through sequential surface reactions that leave the surface alternately terminated with AlCH 3 and OH groups. Using in situ reflection− absorption infrared spectroscopy in a flow reactor, we monitor the consumption of AlCH 3 groups by brief pulses of H 2 O at temperatures between 105 and 300 °C. At low temperatures, the surface reactions occur by what appears to be two stages that can be fit to a biexponential decay. Rate laws based on species of AlCH 3 groups that also predict a biexponential decay are found to depend on unrealistic activation energies for their constituent reactions when applied to the data. However, a model in which the effective activation energy changes linearly with AlCH 3 coverage does adequately fit the data. This model produces the apparent biexponential decay at low temperatures, and it confirms prior suggestions of a coverage dependence in the rate constant. The decrease in the effective activation energy with increasing coverage can be interpreted in terms of a cooperative effect between adjacent AlCH 3 groups. These findings may provide a framework for further studies, and both the kinetic model and parametric fits to the data may be useful in the construction of models of this important ALD process.

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Section: Discussionmentioning

confidence: 99%

“…Other researchers encountering biexponential decays in surface kinetics have come to similar conclusions. 74 If one adopts the view that the reaction probability depends on θ, then the reaction rate can be written generally as…”

Section: ■ Discussionmentioning

confidence: 99%

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

2020

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“…Analysis of the angular distribution of GaCl, which is ejected from the surface at higher temperatures (T > 650 K), points to two surface reaction channels: one where accommodation and desorption of the incident Cl 2 occurs readily, and a second with delayed chemical conversion [464]. Other products have been detected as well, including AsCl 3 , As 4 , and As 2 [465], all ejected with closeto-cosine angular distributions but with measurable time delays [443]. Nevertheless, the ratio of the etching rates of Ga and As is independent of the surface temperature and within the range expected from stoichiometry ( Figure 37) [465].…”

Section: Aii Gallium Arsenide Surfacesmentioning

confidence: 99%

“…Several molecular beam studies have focused on etching processes of semiconductor surfaces by gas-phase agents [441][442][443]. For instance, with Cl 2 , anisotropic etching of Si(100) surfaces was demonstrated by taking advantage of the directionality of the beam: the ratio of the etch rates in the vertical versus horizontal directions was shown to be larger than 25 [444].…”

Section: Ai Silicon Surfacesmentioning

confidence: 99%

Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces

Zaera

2017

Surface Science Reports

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In this review we survey the contributions that molecular beam experiments have provided to our understanding of the dynamics and kinetics of chemical interactions of gas molecules with solid surfaces. First, we describe the experimental details of the different instrumental setups and approaches available for the study of these systems under the ultrahigh vacuum conditions and with the model planar surfaces often used in modern surface-science experiments. Next, a discussion is provided of the most important fundamental aspects of the dynamics of chemical adsorption that have been elucidated with the help of molecular beam experiments, which include the development of potential energy surfaces, the determination of the different channels for energy exchange between the incoming molecules and the surface, the identification of adsorption precursor states, the understanding of dissociative chemisorption, the determination of the contributions of corrugation, steps, and other structural details of the surface to the adsorption process, the effect to molecular steering, the identification of avenues for assisting adsorption,

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“…4-6͒ and Ar + /Cl 2 ion assisted 6,7 GaAs etching process have been achieved. Su et al 15 and Bond et al 16 have identified the volatile reaction products during the chemical etching of GaAs by Cl 2 . Time of flight spectra of uncreated Cl 2 were monitored as a function of the neutral Cl 2 incident energy, surface coverage, and temperature.…”

Section: Caibe Etching Modelmentioning

confidence: 99%

Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl2∕Ar+

Elmonser¹,

Rhallabi²,

Gaillard³

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth High rate reactive ion etch and electron cyclotron resonance etching of GaAs via holes using thick polyimide and photoresist masksThe development of two-dimensional chemically assisted ion beam etching model of GaAs by Cl 2 /Ar + allowed the authors to analyze the role of some critical parameters of etch process on the morphology of trench and mesa structures. In a fact, the simulation results show that the etch rate variation with substrate temperature T s reveals three regimes: For T s Ͻ 350 K, the etch rate of GaAs is mainly controlled by ion assisted etching component. For 350Ͻ T s Ͻ T M , where T M corresponds to the maximum of etch rate, a high variation of etch rate is observed. In this range of temperature, the etch rate is controlled by the chemical component and mainly by the exponential rise of desorption coefficient of GaCl x , 3 , with T s . For T s Ͼ T M a fast decrease of the etch rate is observed because of the high decrease of the coverage rate of Cl, , on the gallium sites with the substrate temperature. On the other hand, the increase of the Cl 2 flow rate allows to improve the anisotropy and contributes to the elimination of both the microtrenching and the transfer of the facets from the mask into the substrate.

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Reactive scattering study of etching dynamics: Cl2 on GaAs(100)

Cited by 17 publications

References 70 publications

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces

Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl2∕Ar+

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Reactive scattering study of etching dynamics: Cl2 on GaAs(100)

Cited by 17 publications

References 70 publications

Atomic Layer Deposition of Al2O3Using Trimethylaluminum and H2O: The Kinetics of the H2O Half-Cycle

Atomic Layer Deposition of Al2O3Using Trimethylaluminum and H2O: The Kinetics of the H2O Half-Cycle

Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces

Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl2∕Ar+

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Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle

Atomic Layer Deposition of Al₂O₃Using Trimethylaluminum and H₂O: The Kinetics of the H₂O Half-Cycle