Reactive sputter-deposition of oxygenated amorphous carbon thin films in Ar/O2

McKindra, Travis; O’Keefe, Matthew J.; Cortez, Rebecca

doi:10.1016/j.diamond.2011.02.002

Cited by 11 publications

(7 citation statements)

References 35 publications

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“…This could be explained by the fact that the oxygen content seemed to saturate in the bulk film above 6 sccm based on ToF-ERDA results (see section 3.6.). The oxygenated a-C films of McKindra et al [4] showed a decreasing trend in I D /I G and similar G peak position with this study. The authors suggested that their films lie in stage 3 and the decreasing I D /I G could be due to graphitization when too much oxygen is added [4].…”

Section: Raman Spectroscopysupporting

confidence: 89%

“…1D). It was also noted that the reference film was thicker than O14 (190 nm against 155 nm), which is explained by the lower deposition rate as the oxygen inflow increases as also reported by McKindra et al [4].…”

Section: Temsupporting

confidence: 67%

“…McKindra et al also noticed a similar change in surface morphology of a-C films after addition of oxygen [4]. The observed surface features seem to correspond to the areas with a slightly different orientation seen on the TEM micrographs.…”

Section: Himmentioning

confidence: 52%

“…Carbon films deposited by unbalanced magnetron sputtering (UBMS) have recently attracted attention because their structure, such as sp 2 /sp 3 ratio and crystallinity, can be extensively modified by varying for example ion irradiation energy, bias voltage or substrate temperature [1,2]. In addition, reactive gases such as nitrogen [3], oxygen [4,5] or hydrogen [6] can be introduced in the deposition chamber during sputtering to dope and modify the carbon films. These changes in film structure and chemistry lead to markedly different electrochemical properties [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Films

Palomäki

Johansson

Laitinen

et al. 2016

Electrochimica Acta

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Amorphous carbon (a-C) films with varying oxygen content were deposited by closed-field unbalanced magnetron sputtering with the aim to understand the effect of oxygen on the structural and physical properties of the films and subsequently correlate these changes with electrochemical properties. The a-C films were characterized by transmission electron microscopy, helium ion microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and time-of-flight elastic recoil detection analysis. The electrochemical properties were studied by electrochemical impedance spectroscopy and cyclic voltammetry with several redox systems (Ru(NH 3) 6 2+/3+ , Fe(CN) 6 3-/4-, dopamine and ascorbic acid). The results indicated that the carbon films are amorphous with an I D /I G ratio near 2.6. The oxygen content of the films seemed to saturate at around 11 at. %, whereas the amount of surface oxygen functional groups increased steadily with increasing oxygen inflow during deposition. O/C ratio increased from 0.09 to 0.19. A significant increase in film resistivity was observed with increasing oxygen content. Lightly oxygenated a-C films showed a low charge transfer resistance (R ct) and reversible electron transfer for Ru(NH 3) 6 2+/3+ whereas both R ct and ΔE p increased considerably for heavily oxygenated films. The inner sphere redox systems were significantly affected by the surface oxygen functional groups with dopamine and ascorbic acid showing a linear increase in ΔE p and E pa , respectively, with increasing oxygen content. Fe(CN) 6 3-/4did not show a clear trend but was still clearly affected by the increase in oxygen content. The double layer capacitance was about 1 µF/cm 2 for all the oxygenated a-C films.

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Section: Raman Spectroscopysupporting

confidence: 89%

Section: Temsupporting

confidence: 67%

Section: Himmentioning

confidence: 52%

Section: Introductionmentioning

confidence: 99%

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Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Films

Palomäki

Johansson

Laitinen

et al. 2016

Electrochimica Acta

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“…However, the XRD patterns in Figure B showed no indication of graphitization. Peaks related to graphite are usually observed around 25° for the (002) plane , 43° for (100) and (101) and 54° for (004) . In this case, the peak at 53° did not originate from graphite but from the substrate, as was identified from measurements done with the bare Si (100) wafer at different rotation angles (Figure B).…”

Section: Resultsmentioning

confidence: 92%

Effect of Power Density on the Electrochemical Properties of Undoped Amorphous Carbon (a‐C) Thin Films

et al. 2019

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Undoped a‐C thin films were deposited with varying power density from 10 to 25 W/cm2 using unbalanced closed‐field magnetron sputtering (CFUBMS). The effect of power density on the physical and electrochemical properties was investigated by experimental characterization methods and atomistic simulations. XPS indicated that the films were composed mostly of sp2‐bonded carbon (55–58 at.%) with a small amount of oxygen (8–9 at.%) in the surface region. The films appeared completely amorphous in XRD. The ID/IG ratio obtained by Raman spectroscopy indicated an increase from 1.76 to 2.34 with power density. The experimental and simulated data suggested a possible ordering and/or clustering of the sp2 phase with power density as the cause of the improved electrical properties of the a‐C films. The electrochemical properties of a‐C were between those of glassy carbon and tetrahedral amorphous carbon with potential windows ranging from 2.77 to 2.93 V and double‐layer capacitance values around 0.90 μF cm−2. Electron transfer for Ru(NH3)63+/2+ and FcMeOH+1/0 was reversible whereas that for IrCl62−/3− was quasi‐reversible. Peak potential separation of dopamine and oxidation potential of ascorbic acid decreased with power density, correlating with the structural and electrical changes of the films. The a‐C thin films deposited by CFUBMS are inherently conductive and their physical properties can be adjusted by varying the deposition parameters to a wide range of electrochemical applications.

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Growth mechanism of carbon films from organic electrolytes

Zhang

Hou

et al. 2013

J Mater Sci

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Reactive sputter-deposition of oxygenated amorphous carbon thin films in Ar/O2

Cited by 11 publications

References 35 publications

Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Films

Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Films

Effect of Power Density on the Electrochemical Properties of Undoped Amorphous Carbon (a‐C) Thin Films

Growth mechanism of carbon films from organic electrolytes

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