Reactive sputtering for highly oriented HfN film growth on Si (100) substrate

Fang, Yu Siang; Chiu, Kuo-Chi; Binh, Huy; Chang, Li

doi:10.1016/j.surfcoat.2019.07.087

Cited by 10 publications

(3 citation statements)

References 24 publications

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“…However, for TiHfN deposition on Si by reactive sputtering, the formation of silicon nitride and silicide on the surface of Si under N-rich and N-poor conditions needs to take into consideration. For the growth of a cubic (001) HfN film on a Si (001) substrate in our recent study, we observed that epitaxial orthorhombic HfSi 2 forms between HfN and Si [23]. Additionally, theoretical calculations of the phase diagram of TiN-HfN show that TiHfN is of a single phase at high temperatures, while a miscibility gap exists at low temperatures [10].…”

Section: Introductionmentioning

confidence: 86%

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Chiu

Shih

et al. 2023

Coatings

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Deposition of a heteroepitaxial TiHfN film with a growth rate of about 1 μm/h was successfully achieved on a Si (001) substrate at a temperature above 700 °C by direct current magnetron reactive sputtering of a Ti0.6Hf0.4 (in atomic fraction) target with an Ar/N2 gas mixture. Annealing of the as-deposited TiHfN/Si sample at a temperature above 1000 °C using microwave plasma with H2/N2 gas was performed to further improve the TiHfN film’s quality. X-ray diffraction results show that the heteroepitaxial TiHfN film on Si exhibits a cube-on-cube relationship as {001}TiHfN//{001}Si and <110>TiHfN//<110>Si. X-ray rocking curve measurements show that the full width at half maximum of (200)TiHfN is 1.36° for the as-deposited TiHfN film, while it is significantly reduced to 0.53° after microwave plasma annealing. The surface morphologies of the as-deposited and annealed TiHfN films are smooth, with a surface roughness of around ~2 nm. Cross-sectional scanning/transmission electron microscopy (S/TEM) shows a reduction in defects in the annealed film, and X-ray photoelectron spectroscopy shows that the film composition remains unchanged. Additionally, S/TEM examinations with atomic resolution illustrate domain matching epitaxy (DME) between TiHfN and Si at the interface. The TiHfN films have good electrical conducting properties with resistivities of 40–45 μΩ·cm.

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Section: Introductionmentioning

confidence: 86%

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Chiu

Shih

et al. 2023

Coatings

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“…Several works of ceramic coatings synthesized by the Sputtering technique are based on titanium nitride with high crystallinity, however few works based on hafnium nitride have been reported although it has similar characteristics (8,11). Therefore, in this work, nanostructured coatings were synthesized under conditions that favor high electrical resistivity and using an architecture of Hf/HfN metal-ceramic layers on 316L stainless steel and silicon (100) using the magnetron Sputtering technique, varying the times in the growth cycles to generate different distribution of hafnium and hafnium nitride bilayers that integrate each coating, and analyzing the effect of the variations in their microhardness, surface electrical resistivity, scratch resistance and tribological performance.…”

Section: Introductionmentioning

confidence: 99%

Microhardness, Resistivity and Tribological Properties of Coatings Based on Hf/Hfn Bilayers Deposited By Sputtering

González¹,

Hernández-Torres²,

Flores-Ramírez³

et al. 2022

ECS Trans.

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In this work, coatings based on hafnium/hafnium nitride (Hf/HfN) bilayers were synthesized by the magnetron sputtering technique, producing coatings with 4, 8 and 16 Hf/HfN bilayers on AISI 316L steel and silicon (100). The surface morphology was studied, which shows a high uniformity of grain cluster groupings. Their microhardness was evaluated where the hardness of the 316L steel was improved by more than 3 orders of magnitude, with a value of 6.71 GPa for 8 Hf/HfN bilayers, this same condition reached a high value of electrical resistivity of 6.55x1014 µΩ-cm, a reduction in the coefficient of friction by about 25% with respect to 316L and presented a total delamination of the coating at 19.77 N, which could allow these coatings to be canted for corrosion protection of 316L steel.

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“…따라서 본 논문에서는 이러한 금속 질화물의 중요성에 집중하였 다. 과거에는 sputtering [4,15], activated reactive evaporation (ARE) [16], chemical vapor deposition (CVD) [17,18], metal-organic CVD (MOCVD) [19,20], low pressure CVD (LPCVD) [21,22], plasmanhanced CVD (PECVD) [23], molecular beam epitaxy (MBE) [24], pulsed laser deposition (PLD) [25], 원자 층 증착법(atomic layer deposition ALD) [3,26] 재까지 sputtering [4,37,[39][40][41], ARE [16], CVD [42,43], MOCVD, ARE [16], CVD [42,43], MOCVD [19,44,45 반사 방지 코팅 막 [111], 태양 전지의 패시베이션 층 [112],…”

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Research Trends of Atomic Layer Deposition of Metal Nitrides and Their Applications in Semiconductor Industry

Lee,

Choi,

Ahn

et al. 2024

Ceramist

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With the recent advances in nanotechnology and the semiconductor industry, the study of nitride thin films has become increasingly important in the fields of electronic devices, optical devices, and nanomaterials research. Various methods have been used to synthesize nitride thin films, among which ALD stands out as a deposition technique capable of yielding high-quality thin films at lower temperatures via sequential self-limiting surface treatments. As the need for high-quality thin film deposition at the nanoscale and highly conformal thin films has emerged, the deposition of metal nitride thin films by ALD has been actively researched, encompassing hafnium nitride, aluminum nitride, titanium nitride, zirconium nitride, and silicon nitride. In this review, we will discuss the current landscape of research pertaining to metal nitride thin films prepared by ALD.

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Reactive sputtering for highly oriented HfN film growth on Si (100) substrate

Cited by 10 publications

References 24 publications

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Direct Current Reactive Sputtering Deposition and Plasma Annealing of an Epitaxial TiHfN Film on Si (001)

Microhardness, Resistivity and Tribological Properties of Coatings Based on Hf/Hfn Bilayers Deposited By Sputtering

Research Trends of Atomic Layer Deposition of Metal Nitrides and Their Applications in Semiconductor Industry

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