Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Iqbal, Adeel; Mohd-Yasin, F.

doi:10.3390/s18061797

Cited by 159 publications

(85 citation statements)

References 89 publications

(148 reference statements)

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“…Coatings 2020, 10, x FOR PEER REVIEW 2 of 8 laser deposition [13], molecular beam epitaxy [14], and the common deposition process DC reactive magnetron sputtering [15]. Nanomaterials offer different advantages, such as flexible space for simplicity reconstruction, enhanced mechanical stability, large surface area, and suitable coating, which may lead to unique applications in different nanoelectronic-scale devices [16].…”

Section: Methodsmentioning

confidence: 99%

“…Among wide bandgap semiconductor materials, such as GaN, AlN, and AlGaN, only aluminum nitride-based UV-light-emitting diodes (LEDs) have potential applications for killing water-borne bacteria. In the past decade, various techniques were employed to produce aluminum nitride (AlN) thin films and nanostructures [10][11][12], such as pulsed laser deposition [13], molecular beam epitaxy [14], and the common deposition process DC reactive magnetron sputtering [15].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique

et al. 2020

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Aluminum nitride nanoparticles (AlN-NPs) were fabricated by a RF magnetron sputtering and inert gas condensation technique. By keeping the source parameters and sputtering time of 4 h fixed, it was possible to produce AlN-NPs with a size in the range of 2–3 nm. Atomic force microscopy (AFM), Raman spectroscopy, X-ray diffraction (XRD), and UV-visible absorption were used to characterize the obtained AlN-NPs. AFM topography images showed quazi-sphere nanoparticles with a size ranging from 2 to 3 nm. The XRD measurements confirmed the hexagonal wurtzite structure of AlN nanoparticles. Furthermore, the optical band gap was determined by the UV-visible absorption spectroscopy. The Raman spectroscopy results showed vibration transverse-optical modes A1(TO), E1(TO), as well as longitudinal-optical modes E1(LO), A1(LO).

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique

et al. 2020

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“…Next, PR was spin-coated and then patterned for subsequent lift-off process, followed by a 1 µm PZT deposition in the sputter system and a 300 nm aluminum deposition in the e-beam evaporator and then the PR dissolving in acetone (Figure 5l). The PR was not damaged during the sputtering process, and was dissolved well in acetone [22,24,25]. The PZT was sandwiched by two aluminum electrodes around the entire circumference of the polymer lens.…”

Section: Experimental Methodsmentioning

confidence: 99%

Effective Light Beam Modulation by Chirp IDT on a Suspended LiNbO3 Membrane for 3D Holographic Displays

Lee

2020

Sensors

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An acousto-optic (AO) holographic display unit based on a suspended waveguide membrane was developed. The AO unit consists of a wide bandwidth chirp interdigital transducer (IDT) on a 20 µm thick suspended crystalline 128° YX LiNbO3 membrane, a light blocker with a 20 µm hole near the entrance, and an active lens near the exit. The 20 µm thickness of the floating membrane significantly enhanced surface acoustic wave (SAW) confinement. The light blocker was installed in front of the AO unit to enhance the coupling efficiency of the incident light to the waveguide membrane and to remove perturbations to the photodetector during measurement at the exit region. The active lens was vertically attached to the waveguide sidewall to collect the diffracted beam without loss and to modulate the focal length in free space through the applied voltage. As SAWs were radiated from the IDT, a Bragg grating with periodic refractive indexes was formed along the waveguide membrane. The grating diffracted incident light. The deflection angle and phase, and the intensity of the light beam were controlled by the SAW frequency and input power, respectively. The maximum diffraction efficiency achieved was approximately 90% for a 400 MHz SAW. COMSOL simulation and coupling of mode modeling were performed to optimize design parameters and predict device performance.

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“…Aluminum nitride (AlN) films exhibit excellent properties such as, high thermal conductivity (320 W m −1 ·K −1 ), high breakdown strength (14 MV cm −1 ) and thermal expansion coefficient similar to Si [1][2][3]. These special properties of AlN films have great potential in optical, electronic and mechanical fields [4,5].…”

Section: Introductionmentioning

confidence: 99%

Effects of target current density on the ionization rate of deposited particles and breakdown strength of AlN films

Liu¹,

Li²,

Jiang³

2020

Mater. Res. Express

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Aluminum nitride (AlN) films were deposited by DC reactive magnetron sputtering using two high purity aluminum targets, at selected target current densities (0.055, 0.083, 0.110 and 0.138 A cm −2 ). The effects of the target current density on the ionization rate of Al atoms, morphology, chemical composition, crystal structure and breakdown strength of AlN films were studied by self-made device, SEM, XPS, XRD and withstanding voltage tester. It was found that the ionization rate of Al atoms gradually increased from 6% to 19% as target current density increased to 0.138 A cm −2 . The results of XPS showed that the Al/N atomic ratio of AlN films gradually approached 1:1. Compared with low target current densities, the AlN films deposited at 0.110 and 0.138 A cm −2 exhibited a fine-crystal structure with average grain size<15 nm, good columnar structure with no obvious voids, and high breakdown strength. This indicated that Al atoms with high ionization rate could be applied to improve the insulation performance of AlN films. Experimental sectionDeposition of AlN films on P-type (100) Si and 6061 aluminum alloy substrates was carried out by DC reactive magnetron sputtering, in which two Al (Φ 120 mm×H 8 mm, 99.9%) targets placed oppositely. The substrates were placed at 80 mm from the Al targets, and the target discharge area was 36 cm 2 . The films deposition process lasted for 210 min at room temperature. The first 20 min was the etching and cleaning of Al targets and the OPEN ACCESS RECEIVED

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Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Cited by 159 publications

References 89 publications

Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique

Fabrication and Characterization of Aluminum Nitride Nanoparticles by RF Magnetron Sputtering and Inert Gas Condensation Technique

Effective Light Beam Modulation by Chirp IDT on a Suspended LiNbO3 Membrane for 3D Holographic Displays

Effects of target current density on the ionization rate of deposited particles and breakdown strength of AlN films

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