Reactively DC magnetron sputtered thin AlN films studied by X-ray photoelectron spectroscopy and polarised infrared reflection

Manova, D.; Dimitrova, V.; Karpuzov, D.S.; Yankov, R.A.

doi:10.1016/s0042-207x(98)00303-0

Cited by 18 publications

(10 citation statements)

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“…. As shown in the fitted spectra, the films exhibited mainly AlN with chemical states of the mostly Al–N bonding (Al 2p : 73.1 ± 0.2 eV; N 1s : 396.1 ± 0.2 eV) and the minor Al–O bonding (Al 2p : 74.1 ± 0.2 eV; O 1s : 531.2 ± 0.2 eV), which are consistent with those reported in the literatures . The relative intensity of Al–N increased slightly whereas that of Al–O increased significantly with the N 2 /Ar ratios.…”

Section: Resultssupporting

confidence: 90%

Low Vacuum Deposition of Aluminum Nitride Thin Films by Sputtering

Yao

2012

Int J Applied Ceramic Tech

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Conventionally, sputtering deposition of thin films requires a low base pressure (high vacuum) to minimize influences of residual gases. Here, a high base pressure (low vacuum) was used, which can reduce significantly the overall processing time. Aluminum nitride ( AlN ) was selected as a model system of dielectric nitrides. All the analyses revealed that the obtained films under a low vacuum environment within specific processing windows exhibited characteristics similar to those of high‐vacuum made AlN films. Such a low vacuum deposition technique takes advantages of kinetically favorable formation of the nitride films and hence, has great potentials in many more technological applications.

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Section: Resultssupporting

confidence: 90%

Low Vacuum Deposition of Aluminum Nitride Thin Films by Sputtering

Yao

2012

Int J Applied Ceramic Tech

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“…As expected, this level increases in the AlN films deposited at higher p b values. The oxygen content determined at a low working pressure of p b = 2 × 10 −3 mbar is clearly under the value of 9% reported by Manova et al [27]. The oxygen contamination in the films originates from the residual gases in the chamber.…”

Section: Edx Investigationssupporting

confidence: 65%

The influence of sputter deposition parameters on piezoelectric and mechanical properties of AlN thin films

Ababneh

Schmid

Hernando

et al. 2010

Materials Science and Engineering: B

164

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“…On reviewing the literature reports on the XPS of AlN for which a binding-energy reference (e.g. C1s) was reported, seven reports [2,6,8,11,12,41,42] were found where the Al2p peak was fitted for both Al2p-N (#1) and Al2p-O (#2) subpeaks. With the exception of Raole et al, [6] all of the data from these references were collected on unsputtered AlN surfaces.…”

Section: Resultsmentioning

confidence: 99%

“…Five groups reported an N1s-Al subpeak plus additional N1s subpeaks; Raole et al [6] at 399 eV, Manova et al [11] at 395.9 eV and Laidani et al [8] at 395.8 eV. Manova et al [12] had reported two additional N1s subpeaks at 395.4 and 396.6 eV. Mahmood et al [2] reported additional N1s subpeaks at energies above the Al-N subpeak, which they assigned to C-N bonds.…”

Section: Resultsmentioning

confidence: 99%

XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

Rosenberger

Baird

McCullen

et al. 2008

Surface & Interface Analysis

292

161

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aTen samples of crystalline aluminum nitride (AlN) film were deposited on sapphire and silicon substrates by a plasma source molecular beam method. The samples were analyzed using X-ray photoelectron spectroscopy (XPS) depth profiling and high-resolution X-ray diffraction. Oxygen levels were observed to decrease exponentially from the surface into the bulk film. Aluminum, nitrogen and oxygen peaks were fitted with subpeaks in a consistent manner and the subpeaks were assigned to chemical states. AlN subpeaks were observed at 73.5 eV for Al2p and 396.4 eV for N1s. An N1s subpeak at 395.0 eV was assigned to N-N defects. No direct N-O bonds are assigned; rather it is proposed that an N-Al-O bond sequence is the source of higher binding energy N1s subpeaks. The observations in this study support a model in which oxygen is bound only to aluminum in the form of Al-O octahedral complexes dispersed or clustered throughout the main AlN matrix or as Al-O bonds on the crystal grain boundaries. The data also suggest that the AlN lattice parameters are related to oxygen content, since the c-axis is observed to increase with increasing oxygen content.

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Reactively DC magnetron sputtered thin AlN films studied by X-ray photoelectron spectroscopy and polarised infrared reflection

Cited by 18 publications

References 0 publications

Low Vacuum Deposition of Aluminum Nitride Thin Films by Sputtering

Low Vacuum Deposition of Aluminum Nitride Thin Films by Sputtering

The influence of sputter deposition parameters on piezoelectric and mechanical properties of AlN thin films

XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

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