Reactivity at the Al/Si3N4 interfaces

Ávila, J.; Sacedón, J. L.

doi:10.1063/1.114084

Cited by 21 publications

(19 citation statements)

References 5 publications

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“…8-10, and the best values of the parameters in Table 3. As mentioned by the E811 collaboration [18], a logarithmic fit favours their new measurement. However, for our purpose, we must point out that, despite the fact that the fit seems better, the pomeron contribution becomes negative for √ s < 12 GeV.…”

Section: The Question Of Unitarization and Alternative Modelsmentioning

confidence: 92%

High-energy forward scattering and the Pomeron: Simple pole versus unitarized models

Cudell

Ежела²,

Kang

et al. 2000

Phys. Rev. D

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Using the largest data set available, we determine the best values that the data at t = 0 (total cross sections and real parts of the hadronic amplitudes) give for the intercepts and couplings of the soft pomeron and of the ρ/ω and a/f trajectories. We show that these data cannot discriminate between a simple-pole fit and asymptotic log 2 s and log s fits, and hence are not sufficient to reveal the ultimate nature of the pomeron. However, we evaluate the existing evidence (factorization, universality, quark counting) favouring the simple-pole hypothesis. We also examine the range of validity in energy of the fits, and show that one cannot rely on such fits in the region √ s < 9 GeV. We also establish bounds on the odderon and the hard pomeron.

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Section: The Question Of Unitarization and Alternative Modelsmentioning

confidence: 92%

High-energy forward scattering and the Pomeron: Simple pole versus unitarized models

Cudell

Ежела²,

Kang

et al. 2000

Phys. Rev. D

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“…Even with the sputtering conditions used in this work, there is some incorporation of oxygen, both at the interface with the substrate, which is the first part of the film to be deposited, and the top layer that is exposed to air. It has been shown that the initial layers of Al deposited on SiO 2 or Si 3 N 4 will reduce the oxide or nitride to form A1 2 O 3 or A1N, respectively 33,34 Oxygen that was adsorbed onto the surface of a substrate previously exposed to air will also be incorporated. So the Al closest to the substrate will contain some amount of oxygen and/or nitrogen.…”

Section: Discussionmentioning

confidence: 99%

Repassivation of Pits in Aluminum Thin Films

Frankel

Scully

Jahnes

1996

J. Electrochem. Soc.

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The effect of metal film thickness on repassivation of pits in sputter-deposited Al thin films was investigated in chloride solutions. The repassivation potential and the critical current density, which is the pit current density below which pits stop growing, were determined for pits in Al thin films ranging from 100 Ǻ to 43 µm in thickness. The repassivation potential first decreased as thickness increased from 100 to 4350 Ǻ, and then increased as the film thickness increased further. This behavior was found to be a consequence of the pit currentdensity/potential relationship. The critical current density, a more informative parameter, decreased for increasing metal film thickness, even when the repassivation potential increased. The critical current density is the minimum current density needed to maintain the critical pit environment and prevent repassivation. The repassivation potential for a given metal film thickness is the potential at which the pit current density drops below the critical value. Masstransport and ohmic resistance both increase as the metal film thickness increases, but the former enhances pit stability and the latter destabilizes pitting in this system. Pit repassivation, and thus stability, are strongly influenced by mass-transport considerations for pits in very thin pits, even though dissolution at low potentials is not under pure mass-transport control. Ohmic effects become increasingly important as the film thickness increases.

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“…Tevatron data were of central importance for determining the increase of the secondary particle multiplicity. There was, however, a considerable uncertainty [12] in the extrapolation of the model predictions to higher energy due to the different cross section measurements indicating either a moderate [13,14] or a fast [15] rise of the total cross section.…”

Section: Introductionmentioning

confidence: 99%

A new version of the event generator Sibyll

Riehn¹,

Engel²,

Fedynitch³

et al. 2016

Proceedings of the 34th International Cosmic Ray Conference — PoS(ICRC2015)

123

131

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The event generator Sibyll can be used for the simulation of hadronic multiparticle production up to the highest cosmic ray energies. It is optimized for providing an economic description of those aspects of the expected hadronic final states that are needed for the calculation of air showers and atmospheric lepton fluxes. New measurements from fixed target and collider experiments, in particular those at LHC, allow us to test the predictive power of the model version 2.1, which was released more than 10 years ago, and also to identify shortcomings. Based on a detailed comparison of the model predictions with the new data we revisit model assumptions and approximations to obtain an improved version of the interaction model. In addition a phenomenological model for the production of charm particles is implemented as needed for the calculation of prompt lepton fluxes in the energy range of the astrophysical neutrinos recently discovered by IceCube. After giving an overview of the new ideas implemented in Sibyll and discussing how they lead to an improved description of accelerator data, predictions for air showers and atmospheric lepton fluxes are presented.

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Reactivity at the Al/Si3N4 interfaces

Abstract: Reactive ion etching of Al and Al-Si films with CCl4, N2, and BCl3 mixtures

Cited by 21 publications

References 5 publications

High-energy forward scattering and the Pomeron: Simple pole versus unitarized models

High-energy forward scattering and the Pomeron: Simple pole versus unitarized models

Repassivation of Pits in Aluminum Thin Films

A new version of the event generator Sibyll

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