Reactivity of Sintered SiC with Metals

Survey on wetting of SiC by molten metals

“…Based on the research results of Kurokawa and Nagasaki [35] and the reviews of Rabin [36] and Li and Zhang [37], the pure metals may be classified into four categories according to their reactivity with SiC, as shown in Table 1. For the first category, there are almost no chemical reactions between the metals and SiC under the experimental conditions.…”

Phase reaction and diffusion path of the SiC/Ti system

“…A knowledge of compounds and of the diffusion path across the ceramic/metal interface is necessary to control the interface structures, which essentially control the mechanical properties. Since Ti is often used as a counterpart in the combination of ceramic and metal, several workers reported the phase reactions and phases formed between SiC and Ti: the formation of TiC and Ti 5 Si 3 phases; [1,2,3] Ti 3 SiC 2 single phase; [4] Ti 5 Si 3 (C) and TiSi 2 phases (in SiC single cystal/Ti couple); [4] and TiC precipitation after formation of Ti 3 SiC 2 , Ti 5 Si 3 C, [1] and Ti 5 Si 3 including TiC. [5] Wakelkamp [6] reported that the phases at the interface from Ti to SiC are Ti 5 Si 3 C x , Ti 5 Si 3 C x including TiC, and Ti 3 SiC 2 phases, although Sambasivan and Petuskey [7] found TiC in Ti, Ti 5 Si 3 C x including TiC, Ti 5 Si 3 C x , and Ti 3 SiC 2 .…”

Interfacial Reactions Between Silicon Base Ceramics and Metals

“…The results on the SiC/Cr couple reported by Kurokawa [2] revealed the diffusion path only partially. In the present experiments, Cr23C6 and Cr7C3 next to Cr and Cr5Si3Cx+Cr3SiCx next to SiC appear at 1673K for the bonding time of 0.3ks.…”

“…The formation of compounds of Ti3SiC2, Ti5Si3Cx and TiC between SiC and Ti have been reported [1][2], though details of the process of interfacial reaction are still unclear. Even less reports exist on the other SiC/Cr [2] and SiC/Nb systems [3,4].…”

“…Even less reports exist on the other SiC/Cr [2] and SiC/Nb systems [3,4]. Furthermore, information on reaction kinetics such as growth rates and activation energies of growth for reaction phases is necessary to control the SiC/metal interfacial structure.…”