Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

Ryzhii, V.; Ryzhii, M.; D., Svintsov,; Leiman, V.; Maltsev, P. P.; Ponomarev, D S; Mitin, V.; Shur, M. S.; T., Otsuji,

doi:10.48550/arxiv.1806.06227

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“…where ω 0 is the optical phonon energy. Equation ( 4) generalizes that obtained previously [13] for the case of the dominant optical phonon generation-recombination processes by the introduction of a phenomenological factor η = τ Auger /(τ Auger + τ Opt ). Considering Eq.…”

Section: Conductivity Of the G-p-channelsupporting

confidence: 72%

“…κ l S is the characteristic potential of the scatter, and l S is the screening length. Setting l S = 5 nm or smaller (see also the estimate for l S at µ 0 = 75 meV [13] and below), we find v S ≃ 2 × 10 7 cm/s. At Σ G = 10 12 cm −2 and T 0 = 25 meV, the latter yields τ 0 ≃ 0.12 ps.…”

Section: B Assumptionsmentioning

confidence: 64%

“…Unique energy spectra, of graphene (G) [1] and a fewlayer Black Phosphorus layer or phosphorene (P) [2], their optical and electric properties, and recent advances in technology open remarkable prospects for the creation of novel devices using G-layers [3][4][5][6], the P-layers [2,[7][8][9][10], and different hybrid structures including the G-P hybrid structures [11][12][13]. In particular, the GP hybrid systems can be used for the improvement of various devices.…”

Section: Introductionmentioning

confidence: 99%

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Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

Ryzhii

Пономарев

et al. 2019

Journal of Applied Physics

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We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hotcarrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with the carrier heating by the incident radiation absorbed in the G-layer due to the intraband transitions. The carrier heating leads to the relocation of a significant fraction of the carriers into the P-layer. Due to a relatively low mobility of the carriers in the P-layer, their main role is associated with a substantial reinforcement of the scattering of the carriers. The GP-FET bolometric photodetector characteristics are effectively controlled by the gate voltage. A strong negative conductivity of the GP-channel can provide much higher responsivity of the THz hot-carriers GP-LD and GP-FET bolometric photodetectors in comparison with the bolometers with solely the G-channels.

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Section: Conductivity Of the G-p-channelsupporting

confidence: 72%

Section: B Assumptionsmentioning

confidence: 64%