Real-Time 100 Gb/s Transmission Using Three-Level Electrical Duobinary Modulation for Short-Reach Optical Interconnects

Verplaetse, Michiel; Lin, Rui; Kerrebrouck, Joris Van; Ozoliņš, Oskars; Keulenaer, Timothy De; Pang, Xiaodan; Pierco, Ramses; Vaernewyck, Renato; Vyncke, Arno; Schatz, Richard; Westergren, Urban; Jacobsen, Gunnar; Popov, Sergei; Chen, Jiajia; Torfs, Guy; Bauwelinck, Johan; Yin, Xin

doi:10.1109/jlt.2016.2643778

Cited by 19 publications

(13 citation statements)

References 16 publications

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“…The 3 dB bandwidth of the DFB-EAM is beyond 90 GHz. The P(I) and P(V) characteristics of the transmitter operating at room temperature (22 • C) can be found in [25]. The DFB-laser exhibits a threshold of 25 mA and an output slope of 0.4 W/A.…”

Section: Electro-absorption Modulated Lasermentioning

confidence: 99%

Real-time 100 Gbps/λ/core NRZ and EDB IM/DD transmission over multicore fiber for intra-datacenter communication networks

Lin¹,

Kerrebrouck²,

Pang³

et al. 2018

Opt. Express

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A BiCMOS chip-based real-time intensity modulation/direct detection spatial division multiplexing system is experimentally demonstrated for both optical interconnects. 100 Gbps/λ/core electrical duobinary (EDB) transmission over 1 km 7-core multicore fiber (MCF) is carried out, achieving KP4 forward error correction (FEC) limit (BER < 2E-4). Using optical dispersion compensation, 7 × 100 Gbps/λ/core transmission of both non-return-to-zero (NRZ) and EDB signals over 10 km MCF transmission is achieved with BER lower than 7% overhead hard-decision FEC limit (BER < 3.8E-3). The integrated low complexity transceiver IC and analog signal processing approach make such a system highly attractive for the high-speed intra-datacenter interconnects.

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Section: Electro-absorption Modulated Lasermentioning

confidence: 99%

Real-time 100 Gbps/λ/core NRZ and EDB IM/DD transmission over multicore fiber for intra-datacenter communication networks

Lin¹,

Kerrebrouck²,

Pang³

et al. 2018

Opt. Express

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“…However, some examples of true real-time 100 Gb/s serial rates without DSP have been demonstrated recently. In [5], a discrete mach-zehnder modulator was operated at 100 Gb/s with custom designed TX and RX consuming 8.6 W. Recently, a real-time 100 Gb/s EDB modulation were reported in [9], where a InP-based traveling-wave EAM with integrated distributed feedback laser was used to transmit below the hard-decision forward error coding limit (HD-FEC) of 3.8×10 −3 . The tranmission line design of the electrode does not only increase the overall device size when compared to a lumped driven modulator, but also necessitates a power consuming 50Ω termination.…”

Section: Introductionmentioning

confidence: 99%

“…The tranmission line design of the electrode does not only increase the overall device size when compared to a lumped driven modulator, but also necessitates a power consuming 50Ω termination. The same transmitter as in [9] was used to for a real-time 100 Gb/s NRZ link in [11]. Unfortunately, the transceiver modules were developed for metro networks, leading to unrealistic formfactors and power consumptions for use in shortreach optical interconnects.…”

Section: Introductionmentioning

confidence: 99%

Real-Time 100 Gb/s NRZ and EDB Transmission With a GeSi Electroabsorption Modulator for Short-Reach Optical Interconnects

Verbist

Verplaetse

Srinivasan

et al. 2018

J. Lightwave Technol.

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Transceivers based on electro-absorption modulators are considered as a promising candidate for the next generation 400 GbE short-reach optical networks. They are capable of combining high bandwidth and low-power operation with a very compact layout, removing the need for traveling wave electrodes and dedicated 50 Ω termination. In this paper we demonstrate the first silicon-based EAM, in combination with an in-house developed SiGe BiCMOS transceiver chipset, capable of transmitting single-lane 100 Gb/s non-return-to-zero in realtime. Transmission up to 500 m of standard single mode fiber and 2 km of non-zero dispersion shifted fiber is demonstrated, assuming a forward-error coding scheme with a bit-error rate limit of 3.8×10 −3 is used. Due to the high line rate, transmission over longer fiber spans was limited by the chromatic distortion in the fiber. As a possible solution, electrical duobinary modulation is proposed as it is more resilient to this type of fiber distortion by reducing the required optical bandwidth. We show improved performance for longer fiber spans with a 100 Gb/s electrical duobinary link, resulting in real-time sub-FEC operation over more than 2 km of standard single-mode fiber without any digital signal processing. Finally, the possibility of a 100 Gb/s EAM-to-EAM link is investigated.

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“…EXT generation transceivers for short-reach optical interconnects will likely employ a four lane scheme with 100G line rates [1], as this is a natural successor of the 100 Gigabit Ethernet (GbE) modules used today without having to increase the component and lane count and, as such, the packaging cost. Although some demonstrations of 100G line rates using non-return to zero (NRZ) or 3-level duobinary exist [2][3][4][5][6], four-level pulse amplitude modulation (PAM-4) has emerged as the preferred modulation format for this scenario, balancing relaxed bandwidth requirements with increased complexity for the E/O-components in the link. Currently, most of the PAM-4 transmitters at 100 Gb/s and above still require electrical digital-to-analog converters (DACs) to generate the multilevel signal [7,8].…”

Section: Introductionmentioning

confidence: 99%

DAC-Less and DSP-Free 112 Gb/s PAM-4 Transmitter Using Two Parallel Electroabsorption Modulators

Verbist

Lambrecht

Verplaetse

et al. 2018

J. Lightwave Technol.

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Four-level pulse amplitude modulation (PAM-4) is widely regarded as the modulation format of choice for the next generation of 400 gigabit Ethernet short-reach optical transceiver. However, generating and receiving PAM-4 at line rates of 112 Gb/s has proven challenging, without relying on power-hungry tools as digital signal processing and digital-to-analog converters, as it requires linearity from the E/O-components in the link and/or predistortion techniques. Moving the binary to multilevel conversion to the optical domain would greatly relax these requirements. Electro-absorption based transceivers would be ideally suited for this type of data center interconnects as they are capable of combining low-power and high bandwidth operation with a very compact layout, removing the need for large travelling wave structures and dedicated 50Ω terminations. In this paper, we present a novel transmitter topology for generating PAM-4 using two binary driven electro-absorption modulators in parallel. Using this approach, we achieve superior performance with respect to a single, but identical multilevel driven EAM. Finally, we demonstrate the first silicon-based modulator capable of transmitting single-lane 112 Gb/s PAM-4 over 2 km of standard single-mode fiber without any electrical DAC, DSP or long transmission line structures and terminations.

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Real-Time 100 Gb/s Transmission Using Three-Level Electrical Duobinary Modulation for Short-Reach Optical Interconnects

Cited by 19 publications

References 16 publications

Real-time 100 Gbps/λ/core NRZ and EDB IM/DD transmission over multicore fiber for intra-datacenter communication networks

Real-time 100 Gbps/λ/core NRZ and EDB IM/DD transmission over multicore fiber for intra-datacenter communication networks

Real-Time 100 Gb/s NRZ and EDB Transmission With a GeSi Electroabsorption Modulator for Short-Reach Optical Interconnects

DAC-Less and DSP-Free 112 Gb/s PAM-4 Transmitter Using Two Parallel Electroabsorption Modulators

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