2010
DOI: 10.1109/tpel.2010.2040634
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Real-Time Compact Thermal Models for Health Management of Power Electronics

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Cited by 172 publications
(88 citation statements)
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“…5 very well, and the R and C parameters extracted using the three-step curve fitting method are listed in Table III. Here the unit for the R parameters is C/W, and the unit for the C parameters is J/C.The extracted R and C parameters can indeed reflect the physical structure of the SiC power module which cannot be revealed using an m×m Foster network similar to the previous RC network models [15][16][17][18]21]. For example, the values of C17, C18, C67 and C68 are higher than the values of CI7 and CI8 (I=2, 3, 4 and 5), and the values of R17, R18, R67 and R68 are higher than the values of RI7 and RI8 (I=2, 3, 4 and 5).…”
Section: B R and C Parameters Of The Rc Network Modelmentioning
confidence: 94%
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“…5 very well, and the R and C parameters extracted using the three-step curve fitting method are listed in Table III. Here the unit for the R parameters is C/W, and the unit for the C parameters is J/C.The extracted R and C parameters can indeed reflect the physical structure of the SiC power module which cannot be revealed using an m×m Foster network similar to the previous RC network models [15][16][17][18]21]. For example, the values of C17, C18, C67 and C68 are higher than the values of CI7 and CI8 (I=2, 3, 4 and 5), and the values of R17, R18, R67 and R68 are higher than the values of RI7 and RI8 (I=2, 3, 4 and 5).…”
Section: B R and C Parameters Of The Rc Network Modelmentioning
confidence: 94%
“…Then the compact RC network model consisting of 115 R and C parameters to predict the transient junction temperatures of the 6 MOSFETS has further been developed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. Such a compact RC network model represents the real structure and heat-flow paths within the module much better than those RC network models reported in the existing literature [15][16][17][18][19][20][21], but there is no existing method to effectively determine the R and C parameters.…”
Section: Introductionmentioning
confidence: 97%
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“…IntroductIon P OWER electronic system has high energy conversion efficiency and controllability [1],it has been widely used in aerospace, industrial automation, transportation, renewable energy power generation and other fields which require the highly reliability [2]- [5]. In these fields, the power will fluctuate in a large range [6]- [8], the reliability of power electronic systems with the harsh operating conditions are far less than traditional power equipment. Power semiconductor devices are the core component of power electronic system, and it is also one of the most fragile components in power electronic system [9], so that power device has a significant effect on the reliability of the power electronics system.Thereby, improving the reliability of power devices is one of the focus of power electronics studies.…”
mentioning
confidence: 99%