Real-time Control System for Improved CMP Pad Profiles

Menk, G.; Dhandapani, Sivakumar; Garretson, C.; Chang, Shou-Sung; Cocca, Christopher; Fung, Jason; Qian, Jun; Tsai, Stan

doi:10.1557/proc-1249-e02-02

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…The current pad life has been increased to approximately 20-40 h depending on the users and processes; in terms of the number of wafers processed per pad, more than 2000 wafers can be polished with a single pad [99]. The reasons for this improvement can be summarized as the development of a high-precision conditioning system to realize low-pressure conditioning technology, a diamond conditioner that can maintain the cutting ability even at low pressures, and real-time pad profile control technology [100,101].…”

Section: Challenges For Cmp Padmentioning

confidence: 99%

“…Finally, the core of the conditioning profile control technology constitutes the development of a real-time pad profile measurement technology and a method to control the weighting function of the conditioning strength according to the pad radius using the result of profile measurement [104]. Using this technology can extend the pad lifespan and maintain pad thickness reduction below the required limit during the pad lifespan [100,101].…”

Section: Challenges For Cmp Padmentioning

confidence: 99%

See 1 more Smart Citation

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Lee

Kim

Jeong

2021

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the CMP process was assessed because of interest in the global environment. In this study, the previously reported impacts of CMP on the environment and studies conducted on developing various methods to reduce environmental burden are reviewed. In addition to analyzing the impacts of CMP, this paper introduces a method for treating CMP wastewater and improving the material removal efficiency through the improvement of CMP consumables. Finally, the authors review research on hybridization of the CMP process and discuss the direction in which CMP technology will progress to improve sustainability in the future.

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Section: Challenges For Cmp Padmentioning

confidence: 99%

Section: Challenges For Cmp Padmentioning

confidence: 99%

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Lee

Kim

Jeong

2021

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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“…[11][12][13][14] The majority of the process is automated, and most polishers for semiconductor devices are equipped with a variety of sensors, including a film thickness meter, to enable various realtime measurements while polishing. 15,16 In particular, endpoint methodologies for adjusting film thickness play a key role in semiconductor CMP, and endpoint methodologies using optical, 17 platen load current (torque sensor), [18][19][20] and piezo electronic sensor 21 methods are commonly employed.…”

mentioning

confidence: 99%

Real-Time Prediction of Removal Rate and Friction Coefficient During Chemical Mechanical Polishing Using Motor Load Currents with a Polisher

Uneda¹,

Ota²,

Takiguchi³

et al. 2023

ECS J. Solid State Sci. Technol.

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Herein, a method for predicting real-time removal rate and friction coefficient between the pad and substrate during chemical mechanical polishing was investigated using only the load currents of two motors of a polisher. Polishers for semiconductor devices are equipped with various sensors, enabling a real-time prediction of the removal amount. The polishers used to polish substrates are not usually equipped with sensors, and the polishing time is fine-tuned by skilled-technicians to achieve the desired substrate thickness. However, since every polisher has some motors, predicting the removal rate and friction coefficient using only the real-time data produced by these motors would be beneficial. This study attempts to predict the removal rate and friction coefficient in long-time polishing using a training dataset obtained from short-time polishing. Results showed that by performing extremely low-pressure, long-time polishing to understand the polisher characteristics and then subtracting the polisher characteristics from the motor information during long-time polishing, highly accurate predictions of the removal rate and friction coefficient within ~94% in percent match (prediction accuracy) between the experimental and predicted values can be obtained. Furthermore, slurry degradation during CMP can be monitored using this prediction method.

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Investigating the Impact of Pad Groove Depth Reduction on Process Variation in Oxide Chemical Mechanical Polishing

Liu,

Kang,

et al. 2024

ECS J. Solid State Sci. Technol.

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The groove depth of a polishing pad diminishes due to continuous wear from the diamond conditioner. Over the course of approximately 20 hours of use, this reduction in groove depth enhances slurry flow across both the pad grooves and surface. A fluid simulation analysis indicates that the new slurry mass fraction at 0.51 seconds increases from 72.34% for an 850 µm groove depth to 100.00% for a 250 µm depth. Consequently, polishing performance metrics including removal rate, within-wafer nonuniformity (WIWNU), and added defects exhibit variations commensurate with groove depth alterations. To explore the influence of process parameters on these polishing performance metrics, oxide film polishing experiments were conducted using pads with initial groove depths of 250, 500, 750, and 850 µm. The effects of process parameters, including pad cut rate, retainer ring pressure, and slurry flow rate on polishing were separately examined across different groove depth pads. Generally, shallow groove pads display improved removal rates but worse WIWNU. Additionally, the maximum surface temperature of the pads was recorded, serving as an indirect indicator of individual parameter effects. The findings have implications for advanced process control, guiding the optimization of polishing protocol in consideration of pad lifetime.

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Real-time Control System for Improved CMP Pad Profiles

Cited by 3 publications

References 3 publications

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Real-Time Prediction of Removal Rate and Friction Coefficient During Chemical Mechanical Polishing Using Motor Load Currents with a Polisher

Investigating the Impact of Pad Groove Depth Reduction on Process Variation in Oxide Chemical Mechanical Polishing

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