Real Time Magnetic Imaging by Spin-Polarized Low Energy Electron Microscopy with Highly Spin-Polarized and High Brightness Electron Gun

Abstract

We developed a spin-polarized low energy electron microscopy (SPLEEM) with a highly polarized and high brightness spin electron gun in the present study. Magnetic structures of Co/W(110) were observed with an acquisition time of 0.02 s with a field of view of 6 m. We carried out a dynamic observation of magnetic structures with the SPLEEM during the growth of Co on W(110). #

Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode

“…The present photocathode was installed in a SPLEEM with an extreme high vacuum gun chamber [21]. After depositing Cs and oxygen and making the NEA surface, the electron beam was extracted from the photocathode excited at a photon energy of 1.58 eV.…”

Self-Standing Graphene Sheets Prepared with Chemical Vapor Deposition and Chemical Etching

“…The LEED patterns of the three surfaces exhibit sharp diffraction spots representing 1  1 atomic structures, indicating that the graphene layers are commensurate with Ni(111) substrate. The high-brightness LEEM used in this work was recently developed by Koshikawa and others; a negative electrode affinity (NEA) photocathode operating in an Extreme High Vacuum (XHV, ~10 -10 Pa) chamber achieved high brightness of 10 7 A cm -2 sr -1 Suzuki et al, 2010;Yamamoto et al, 2008). (111) system (see Shelton et al, 1974).…”

Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

“…C 2016 Author(s) The carrier spin relaxation time of compound III-V semiconductors is important information for spintronics applications such as spin transistors 1,2 and spin-polarized electron sources. [3][4][5][6] Superlattices of III-V compound semiconductors are useful as a spin-polarized electron source 3,4 in high-energy physics and for electron microscopy to obtain magnetic images. 5,6 In these applications, spin relaxation is important information, since it affects the spin polarization of injected and extracted electrons.…”

“…[3][4][5][6] Superlattices of III-V compound semiconductors are useful as a spin-polarized electron source 3,4 in high-energy physics and for electron microscopy to obtain magnetic images. 5,6 In these applications, spin relaxation is important information, since it affects the spin polarization of injected and extracted electrons. In 1-x Ga x As y P 1-y lattice-matched to InP is an attractive semiconductor material because it is capable of tuning the energy bandgap over a wide range.…”

“…8 From the viewpoint of spintronics, the spin relaxation time of p-type InGaAsP is crucial information because p-type semiconductors are widely used in transistors and spin-polarized electron sources to provide a flow of carriers. 5 In this paper, we report the carrier lifetime and carrier spin relaxation time of InGaAsP, particularly in relation to rapid thermal annealing. Rapid thermal annealing is known to recover the crystal quality in many cases.…”