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We developed a spin-polarized low energy electron microscopy (SPLEEM) with a highly polarized and high brightness spin electron gun in the present study. Magnetic structures of Co/W(110) were observed with an acquisition time of 0.02 s with a field of view of 6 m. We carried out a dynamic observation of magnetic structures with the SPLEEM during the growth of Co on W(110). #

31 surfaces were investigated in the present work. The dynamic growth behavior was observed with low energy electron microscopy (LEEM), and the local surface structure change was monitored with selected area low energy electron diffraction (LEED). Xray generated photo emission electron microscopy using synchrotron radiation (SR-XPEEM) was employed in order to see the variation of the chemical state on the surface. On both p 3 × p 3 and p 31 × p 31 surfaces, Sb adsorption induces the surface structural change and modifies the chemical interaction of In atoms with Si. In atoms are replaced by impinged Sb atoms, and the discharged In atoms form islands.

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The strains in GaAs/GaAsP superlattices used in spin-polarized photocathodes grown on GaAs and GaP (001) substrates were determined by X-ray diffraction. The thicknesses of the GaAs wells and GaAsP barrier layers were also determined. The band structures of the superlattices were calculated on the basis of these experimentally determined strains and layer thicknesses. The thicknesses and band structures were in good agreement with those observed by transmission electron microscopy and photoluminescence, respectively. The strains induced in the GaAs well layers were approximately linearly dependent upon the phosphorous fraction in the GaAsP layer, and the splitting between the heavy hole band and the light hole band of the superlattices grown on GaP substrates was larger than that of superlattices grown on GaAs substrates. In photocathodes grown on GaP substrates, low polarizations were observed, not due to a lack of band splitting, but to depolarization scattering caused by crystal defects, which were different from that induced in superlattices grown on GaAs substrates.