Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction

Freundlich, A.; Rajapaksha, C.

doi:10.1117/12.875811

Cited by 2 publications

(4 citation statements)

References 11 publications

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“…At 1.5ML InAs monolayer deposition RHEED pattern change from 2D to 3D at the onset of islands formation (Fig.3 (a)). Further deposition creates smaller quantum dots and numerous spectroscopic investigations establish that the InAs quantum dots are predominantly bounded by {137}A facets 7,8 which we also have confirmed in a separate study 6 . Due to the fact that there are no facets parallel to [1 -1 0] azimuth in such structures, no clear chevrons can be seen in the RHEED pattern as shown in fig 3(b).…”

Section: Application Of the Methodology To The Study Of Quantum Dot Fsupporting

confidence: 56%

“…Evolution of chevron angle along [1][2][3][4][5][6][7][8][9][10] azimuth is exhibited here as the growth proceeds in terms of InAs monolayers deposited at 440 0 C.…”

Section: Application Of the Methodology To The Study Of Quantum Dot Fmentioning

confidence: 99%

“…The theoretical studies performed indicated that the smallest angle 45 0 corresponds to {2 5 11} family of facets and they more stable than {137} faceting. [1][2][3][4][5][6][7][8][9][10] (c) InAs monolayers deposited (ML) Figure 5. Chevron angle evolution as a function of InAs monolayer deposited at growth temperature 440 0 C and proposed structures based on mathematical calculation…”

Section: Application Of the Methodology To The Study Of Quantum Dot Fmentioning

confidence: 99%

“…In our previous studies, we have shown the possibility of using a theoretical modeling tool we have developed over the years in analyzing quantum dot characteristics in real time 4,6 . Here the RHEED patterns were calculated, considering the refraction of electrons at the interfaced and the effect of lattice vibrations on the electron scattering at high temperatures.…”

Section: Quantum Dot Facet Determination Using Rheedmentioning

confidence: 99%

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Unveiling structural properties of self-assembled quantum dots

2013

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A better understanding of structural properties and growth kinetics of Stranski-Krastanov (SK) quantum dots is necessary for applying dot potential in optical and electronic applications. In fact, We have recently demonstrated theoretically and experimentally, the ability of reflection high energy electron diffraction (RHEED) tool in quantitative analysis such as extracting average dot size, facet orientation and average dot density and real time monitoring of dot size during growth .As an extended study, in this work for the first time we present the experimental evidence on onset epitaxial quantum dot average shape evolution and theoretical predictions on QD facet orientations.

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Section: Application Of the Methodology To The Study Of Quantum Dot Fsupporting

confidence: 56%

“…Evolution of chevron angle along [1][2][3][4][5][6][7][8][9][10] azimuth is exhibited here as the growth proceeds in terms of InAs monolayers deposited at 440 0 C.…”

Section: Application Of the Methodology To The Study Of Quantum Dot Fmentioning

confidence: 99%

Section: Application Of the Methodology To The Study Of Quantum Dot Fmentioning

confidence: 99%

Section: Quantum Dot Facet Determination Using Rheedmentioning

confidence: 99%

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Unveiling structural properties of self-assembled quantum dots

2013

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Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

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Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2-bonded to sp 3-bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

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Real-time metrology of self assembled quantum dots by reflection high energy electron diffraction

Cited by 2 publications

References 11 publications

Unveiling structural properties of self-assembled quantum dots

Unveiling structural properties of self-assembled quantum dots

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

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