Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

Zettler, J.‐T.; Haberland, K.; Zorn, M.; Pristovsek, Markus; Richter, Wolfgang; Kurpas, P.; Weyers, M.

doi:10.1016/s0022-0248(98)00700-3

Cited by 56 publications

(32 citation statements)

References 27 publications

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“…In (1) [110] r and [110] r are the complex reflectances of light polarized linearly along the indicated directions in the surface (see [1] for details). Please note that all spectra are taken on rotating samples.…”

Section: Methodsmentioning

confidence: 99%

“…Parameters like the material composition or the doping profile in the grown layer structure define the properties of the finally resulting device. In situ measurements enable an early and efficient detection of these parameters already during the growth process [1]. Under gas-phase conditions only optical in situ techniques can be applied in contrast to e.g.…”

Section: Introductionmentioning

confidence: 99%

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Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Zorn

Zettler²

2005

Physica Status Solidi (b)

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The use of the optical in situ techniques reflectance anisotropy (RA) and normalized reflectance (NR) for metal-organic vapour-phase epitaxy (MOVPE) growth processes of compound semiconductor devices is reviewed. The RA signal detects small deviations in the doping profile during growth of hetero-bipolar transistors and correlates to the emission wavelength of edge-emitting laser structure via its sensitivity to the quantum well composition. The NR signal is crucial for the alignment of distributed Bragg reflectors (DBR) in vertical-cavity surface-emitting lasers. With simultaneously performed RA and NR measurements the doping profile as well as the DBR alignment can be determined in situ. The composition monitoring in quaternary InGaAsP grown on InP is demonstrated using the RA signal for the As : P ratio while the NR signal is used for the Ga : In ratio. For AlGaInP on GaAs the NR signal is sensitive to both the aluminium and the indium content. Therefore these effects have to be separated via the determination of the growth efficiency of the respective materials using the growth rate calculated from the NR signal.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Zorn

Zettler²

2005

Physica Status Solidi (b)

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“…In order to have an in situ (real-time) etch-depth control with this demanding accuracy we have successfully employed an adequate measurement techniques, by transferring the concept of reflectance anisotropy spectroscopy (RAS), which is well-known from epitaxy for growth control by now [29][30][31][32][33][34][35], to reactive ion etching (RIE) of monocrystalline semiconductor layer sequences [36][37][38][39]. We have used argon as the plasma gas and 2 volume-% of chlorine as the reactive gas.…”

Section: Technological Workmentioning

confidence: 99%

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Fouckhardt

Kleinschmidt

Strassner

et al. 2017

Advances in OptoElectronics

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Previously we focused on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering. The resonator had a round-trip length of 4f, where f is the focal length of the Fourier-transform element (FTE), that is, a cylindrical mirror in-between the orthogonal resonator branches. This 4f set-up can be called "retracted once" due to the reflective filter after 2f ; that is, the 2f path was used forwards and backwards. Now the branches are retracted once more resulting in a compact 1f long linear resonator (called "retracted twice") with a roundtrip length of 2f. One facet accommodates the filter, while the other houses the FTE, now incorporating a film-waveguide lens. The BAL facet with the filter represents both the Fourier-transform plane (after 2f, i.e., one round-trip) as well as the image plane (after 4f, two round-trips). Thus filtering is performed even after 4f, not just after 2f. Experimental results reveal good fundamental TMS for pump currents up to 20% above threshold and a one-dimensional beam quality parameter 2 1D = 1.47. The BALs are made from AlGaInAsSb, but the concept can equally well be employed for BALs of any material system.

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“…Since the bulk optical properties of cubic semiconductors are isotropic, the observed anisotropy is related to the lower symmetry of the surface or interface. 7 The RAS signal of a (001)-surface of a zincblende-type semiconductor is determined by Re Im (1) where r 110 [ ] and r [110] are the complex reflectances for light polarized linearly in the directions as indicated. For the laser structures studied in this work, only the real part of the reflectance anisotropy and the absolute reflectance were measured as a function of time and photon energy.…”

Section: Optical Setupmentioning

confidence: 99%

“…11,12 It is based on the configuration of Aspnes et al 7 The RAS setup is mounted above the reactor tube of the epitaxial system, and has optical access to the sample through a standard normal incidence viewport made out of quartz transparent to UV/VIS-light. Apart from a tiny hole in the liner tube no modification to the growth system is necessary.…”

Section: Optical Setupmentioning

confidence: 99%

MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

Haberland

Bhattacharya

Zorn

et al. 2000

Journal of Elec Materi

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Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

Cited by 56 publications

References 27 publications

Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy

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