Realization of Atomically Controlled Dopant Devices in Silicon

Rueß, Frank J.; Pok, W.; Reusch, T. C. G.; Butcher, M. J.; Goh, Kuan Eng Johnson; Oberbeck, L.; Scappucci, Giordano; Hamilton, A. R.; Simmons, M. Y.

doi:10.1002/smll.200600680

Cited by 110 publications

(60 citation statements)

References 43 publications

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“…Efforts to make such devices have led to atomically precise fabrication methods which incorporate phosphorus atoms in a single monolayer of a silicon crystal [17-20]. These dopant atoms can be arranged into arrays [21] or geometric patterns for wires [16,22] and associated tunnel junctions [23], gates, and quantum dots [24,25] - all of which are necessary components of a functioning device [26]. The patterns themselves define atomically abrupt regions of doped and undoped silicon.…”

Section: Introductionmentioning

confidence: 99%

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

et al. 2013

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The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunnelling microscope lithography. Using vasp, we develop a plane-wave density functional theory description of systems which is size limited due to computational tractability. Nonetheless, we provide valuable data for the benchmarking of empirical modelling techniques more capable of extending this discussion to confined disordered systems or actual devices. We then develop a less resource-intensive alternative via localised basis functions in siesta, retaining the physics of the plane-wave description, and extend this model beyond the capability of plane-wave methods to determine the ab initio valley splitting of well-isolated δ-layers. In obtaining an agreement between plane-wave and localised methods, we show that valley splitting has been overestimated in previous ab initio calculations by more than 50%.

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Section: Introductionmentioning

confidence: 99%

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

et al. 2013

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“…1-8 These entities can be fabricated directly on surfaces in a bottom-up fashion with scanning tunneling microscopy (STM), [9][10][11] and STM is also used to directly measure their magnetic properties. 12,13 The rich magnetic properties originate in the exchange couplings between the individual magnetic moments [14][15][16][17] and are of great interest for concepts like spin-transfer torque [18][19][20] and spin chirality 21 on the nanoscale, as well as for potential applications in quantum computing.…”

Section: Introductionmentioning

confidence: 99%

Design of magnetic textures of nanocorrals with an extra adatom

Konstantinidis

Lounis

2013

Phys. Rev. B

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It is shown that in antiferromagnetic open or closed corrals of magnetic adatoms grown on surfaces, the attachment of a single extra adatom anywhere in the corral impacts on the geometrical topology of the nanosystem and generates complex magnetic structures when a magnetic field is applied or a magnetic coupling to a ferromagnetic substrate exists. The spin configuration of the corral can be tuned to a nonplanar state or a planar noncollinear or ferrimagnetic state by adjusting its number of sites, the location of the extra adatom, or the strength of the coupling to the ferromagnetic substrate. This shows the possibility to generate nontrivial magnetic textures with atom-by-atom engineering anywhere in the corral and not only at the edges.

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“…Significant progress has been realized in the direction of dopant positioning by either top-down approaches, such as single-ion implantation [7,32-34], or bottom-up approaches [35,36]. An alternative way to control the location of the active dopant would be to take advantage of the effects of nanopatterning the channel; by imposing specific patterns on randomly doped channels, the probability of successfully isolating a single dopant is enhanced.…”

Section: Single-dopant Transistorsmentioning

confidence: 99%

Atom devices based on single dopants in silicon nanostructures

et al. 2011

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Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

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Realization of Atomically Controlled Dopant Devices in Silicon

Cited by 110 publications

References 43 publications

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

Design of magnetic textures of nanocorrals with an extra adatom

Atom devices based on single dopants in silicon nanostructures

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