Realization of C-60 whiskers incorporated chalcopyrite CuInxGa1-xSe2 in Cu2Se/C-60/In3Se2/C-60/Ga2Se3 multilayer structures

Nelson, P. Issac; Mohan, A.; Kannan, R.; Vidhya, B.; Rajesh, S.

doi:10.1016/j.matlet.2020.128692

Cited by 3 publications

(1 citation statement)

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“…(abbreviated CZSnS), have been classified as prominent semiconductors [1,2]. For development of new photovoltaic systems, such materials exhibit a low toxicity and high abundance in the earth's crust compared to other elements; as well as represent a non-polluting alternative (a favorable alternative with the environment) in contrast with equivalent systems of CuIn x Ga 1−x Se 2 [3]. The characterization, obtaining and analysis of CZTiS and CZSnS materials under hydrothermal conditions at specific temperatures, represent a great opportunity to development and tuning of some properties which are opti-mal for photovoltaic applications [4,5].…”

Section: Introductionmentioning

confidence: 99%

Mathematical modelling of the conductivity in CZTiS-CZSnS as a function of synthesis temperature

Mesa

Báez

Cerón-Achicanoy

et al. 2021

J. Phys.: Condens. Matter

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The electrical behavior of photovoltaic materials related with Cu2ZnTiS4 and Cu2ZnSnS4 materials were analyzed as function of synthesis temperature in accordance with a new mathematical model based on the Kramers–Kronig equations with a high reliability. The samples were obtained through a hydrothermal route and a subsequent thermal treatment of solids at 550 °C for 1 h under nitrogen flow (50 ml min−1). The characterization was done by x-ray diffraction, ultraviolet spectroscopy (UV), Raman spectroscopy, atomic force microscopy (AFM) and solid state impedance spectroscopy (IS) techniques. The structural characterization, confirm the obtention of a tetragonal material with spatial group I-42m, oriented along (1 1 2) facet, with nanometric crystal sizes (5–6 nm). The AFM and Raman analysis confirm a high level of chemical homogeneity and correlation with the synthesis temperature, associated with the roughness of the samples. The UV spectroscopy confirm a band gap around 1.4–1.5 eV, evidencing the effectiveness of the synthesis process. The IS results at room temperature with a probability of 95%, confirm a high consistency of data with respect to values of real and imaginary impedance, allowing to obtain information of the conductance, reactance and inductance, achieving conductivity values around 10−5 and 10−3 Ω−1 m−1 in comparison with traditional mathematical models used for this purpose.

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