2019
DOI: 10.1016/j.aeue.2019.04.027
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Realization of DTMOS based CFTA and multiple input single output biquadratic filter application

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Cited by 5 publications
(5 citation statements)
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“…The topology of the proposed filter (Fig. 2) can be directly synthesized from the matrix (7). The filter consists of eight OTAs and two capacitors (both grounded).…”
Section: Design Proposalmentioning
confidence: 99%
See 1 more Smart Citation
“…The topology of the proposed filter (Fig. 2) can be directly synthesized from the matrix (7). The filter consists of eight OTAs and two capacitors (both grounded).…”
Section: Design Proposalmentioning
confidence: 99%
“…Commonly proposed analogue frequency filters which provide several transfer functions [1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11] have multiple inputs and/or outputs. Typical topologies (organization of inputs and outputs) are known as: Single-Input Multiple-Output (SIMO) filters [1], [2], [3], Multiple-Input Single-Output filters [4], [5], [6], [7], [8] and Multiple-Input Multiple-Output (MIMO) filters [9], [10], [11]. Specific type of the transfer function is then available based on the selection of input/output (or a suitable combination of inputs/outputs).…”
Section: Introductionmentioning
confidence: 99%
“…Bulk terminal and gate terminal of MOS transistor are connected together to reduce the threshold voltage of MOS transistor in this technique. By doing this, the power consumption of circuit is significantly decreased because of MOS transistor operating in subthreshold region [2,4,9,[11][12][13][14][15][16]21]. Figure 1 demonstrates the structure of DTMOS transistor and its symbol.…”
Section: Ota Structure Based On Dtmos Transistormentioning
confidence: 99%
“…Many methods in order to decrease the power dissipation of the circuit have been used by researchers [2][3][4][5][6][7][8][9][10][11][12]. One of the effective methods called DTMOS technique is utilized to reduce the power consumption and the required supply voltages [2,4,9,[11][12][13][14][15]. In this technique, bulk terminal is connected to gate terminal of MOS transistor so that the power dissipation becomes noteworthily less compared to the designs using traditional MOS transistors.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 6. DTMOS transistor and its circuit symbol[39].The simulation results have been obtained utilizing the SPICE program, employing 0.13 µm IBM CMOS technology parameters. The power supply and bias voltage were chosen as VDD = −VSS = 0.6 V and VB = −0.2 V, respectively.…”
mentioning
confidence: 99%