properties of their electronic structure to observe unique physical phenomena, such as the chiral [15][16][17] and axial-gravitational anomaly, [18] the circular photogalvanic effect, [19][20] chiral sound waves, [21][22] the surface-state enhanced Edelstein effect [23] or the recently proposed chiral Hall-effect. [24] The observation of most of these effects depends on whether the topological electronic states of the WSMs can be readily accessed. In this regard, the ability to suppress non-topological (trivial) surface states, as well as to modify the Fermi-level position to get a desired Fermi surface topology, would allow full access to unveil the role of topological surface states on physical observables, and, in addition, to construct on-demand Fermi-surfaces to harness electrical, acoustic or optical measurable outputs. So far, the diversity of electronic structures was achieved through exploring different WSMs, but a genuine control of the shape and size of topological bands in the same material has remained elusive, mostly due to the lack of bottom-up, ultrahigh-vacuum synthesis methods that allow for control of the surface termination and Fermi-level position, for instance by doping or strain. This challenge needs to be overcome to achieve Fermi-level engineered Weyl semimetal heterostructures, leading to a plethora of novel platforms to explore both fundamental phenomena and device applications based on topology.In this work, we show two striking modifications of the electronic structure of the type-I Weyl semimetal NbP, that become accessible due to a successful epitaxial thin film growth synthesis route. [25] First, a full suppression of the bowtie-like (trivial) surface states of NbP is obtained due to the saturation of surface dangling bonds by an ordered phosphorous termination, that manifests itself in a (√2 × √2) surface reconstruction. Second, by chemically doping the surface with Se-atoms, the Fermi-energy undergoes a substantial shift of around +0.3 eV (electron doping) while preserving the pristine NbP bandstructure features, thereby enabling the first experimental visualization of the topological band dispersion well above the Weyl points, and highlighting the large Fermi-level tunability that can be achieved by surface chemical doping in a molecular beam epitaxy process. Our work opens up the possibility of realizing recent theoretical proposals, such as a Weyl semimetal field effect transistor (WEYLFET) that relies on purely topological Weyl semimetals, a class of 3D topological materials, exhibit a unique electronic structure featuring linear band crossings and disjoint surface states (Fermi-arcs). While first demonstrations of topologically driven phenomena have been realized in bulk crystals, efficient routes to control the electronic structure have remained largely unexplored. Here, a dramatic modification of the electronic structure in epitaxially grown NbP Weyl semimetal thin films is reported, using in situ surface engineering and chemical doping strategies that do not alter the NbP...