Realization of One-Diode–Type Resistive-Switching Memory with Cr–SrTiO$_{3}$ Film

Song, Min; Seo, Yujeong; Kim, Yeon Soo; Kim, Hee Dong; An, Hongyu; Park, Bae Ho; Sung, Yun Mo; Kim, Tae Geun

doi:10.1143/apex.5.091202

Cited by 21 publications

(7 citation statements)

References 18 publications

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“…The high performance and increasing rectifying property of the diodes with decreasing area was also maintained in the 1D1R devices, as shown in Figure d, and a maximum rectification ratio of 8.4 × 10 8 was achieved at the 2 × 2 µm 2 area. This is the highest value reported in the rectifying ReRAM systems to date . Provided that the same reading voltage value was employed, the decreased effective voltage drop on the diode component compared to the single diode in Figure a would in fact have degraded the rectifying performance of the 1D1R.…”

mentioning

confidence: 88%

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10⁹

Yoon

Kim

Yoo

et al. 2017

Adv Elect Materials

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Resistance switching random access memory (ReRAM) is a highly appealing contender for a versatile replacement for the NAND flash or storage class memory, bridging the performance gap between dynamic random access memory (DRAM) and hard disk (or NAND flash) in computers. [1] The recent announcement of the production of a 3D cross-point (3D X-point) memory jointly developed by Intel and Micron appears to be a great step forward in this area, although the materials and process details are yet to be uncovered (ReRAM or phase change RAM). The eye-catching features of the 3D X-point memory are the adopted crossbar architecture that uses a two-terminal device instead of a transistor as the cell selector, and the double-layer-stacked structure, which results in an extremely small cell size (2F 2 , where F is the minimum feature size). The crossbar array (CBA) is a passive array architecture that was used in the first random access memory of the magnetic core memory ≈50 years ago. Ever since the development of the metal-insulator-semiconductor field effect transistor (MISFET), the cell selection function for a matrix-type memory has been assumed by MISFET, as in DRAM, thanks to its supreme performance as a switch. With the extreme scaling down of the memory cell to F < 10 nm, however, MISFET may not be an optimum solution as a cell selector because of its inherently larger cell size (8F 2 ) compared to the diode or threshold switch (4F 2 ), in addition to the performance degradation in accordance with the downscaling. The recent development of an ultrahighdensity (256 GB) NAND flash memory based on its vertical integrated structure and three-bit operation is an excellent demonstration of the strategy with which the integration density can be further increased without shrinking the memory cell size. [2] In this regard, the evolution of ReRAM into the third dimension (i.e., layer stacking or vertical integration of memory cells) is a natural consequence of the engineering efforts for achieving ultrahigh-density memory. Some of the authors have reported the details of the various aspects of integrating the ReRAM in 3D structures, and it was found that layer stacking and vertical integration have their respective pros and cons. [3,4] A double-layer-stacked 1 diode-1 resistor (1D1R) cross-bar array (CBA) resistance switching random access memory is fabricated. The TiO 2 -based Schottky diode and the unipolar resistance switching TiO 2 comprise the cell selector and nonvolatile memory components, respectively. All the fabrication processes are performed near room temperature through physical vapor deposition processes, and the performance degradation by the thermal budget is well suppressed. As a result, a rectification ratio as high as 1.4 × 10 9 is achieved from the appropriately cycled diode, which can last up to 10 8 cycles in the integrated structure. Such highly promising performance is confirmed from both the upper and lower memory layers, which confirm the possible route for the multistacked memory structure. The two-bi...

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confidence: 88%

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10⁹

Yoon

Kim

Yoo

et al. 2017

Adv Elect Materials

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“…Thin film materials comprised of blended conducting and insulating components have been utilized in a wide variety of applications including resistive layers for electron multipliers such as microchannel plates,1–3 resistive memories,4–8 electro‐chromic devices,9–15 biomedical devices,16–18 and charge‐dissipating coatings on micro‐electromechanical systems (MEMS) devices 19–23. The physical and electrical properties of composite thin films can be tailored by adjusting the relative proportions of the constituent materials.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of W:Al₂O₃ Nanocomposite Films with Tunable Resistivity

Mane

Elam

2013

Chemical Vapor Deposition

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Nanocomposite tungsten-aluminum oxide (W:Al 2 O 3 ) thin films were prepared by atomic layer deposition (ALD) using tungsten hexafluoride (WF 6 ) and disilane (Si 2 H 6 ) for the W ALD and trimethyl aluminum (TMA) and H 2 O for the Al 2 O 3 ALD. Quartz crystal microbalance (QCM) measurements performed using various W cycle percentages revealed that the W ALD inhibits the Al 2 O 3 ALD and vice versa. Despite this inhibition, the relationship between W content and W cycle percentage was close to that predicted by theoretical calculations based on the growth per cycle values of binary compounds. Depth profiling XPS showed that the (W:Al 2 O 3 ) films were uniform in composition and contained Al, O, and metallic W as expected, but also included significant F and C. Cross-sectional TEM revealed the composite film structure to be metallic nanoparticles ($1 nm) embedded in an amorphous matrix. The resistivity of these composite films could be tuned in the range of 10 12 -10 8 V cm by adjusting the W cycle percentage between 10% and 30%W. These films have applications in electron multipliers as well as electron and ion optics.

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“…When the applied voltage is increased, a square‐law behavior (I ∝ V m ; m = ~2) appears in Region 3 (> 0.8 V), corresponding to Child's law . Moreover, the set process occurs when Region 2 transitions to Region 3, which means that the LRS begins when the traps are filled with electrons supplied by the electric fields (I ∝ V m ; m > 2) . In addition, the LRS fitting curve also shows typical ohmic behavior, indicating the good formation of conducting filaments after the set process.…”

Section: Resultsmentioning

confidence: 96%

Resistive Switching Behaviors of Sol‐Gel‐Derived MgNb₂O₆ Thin Films on ITO/glass Substrate

Chen

Huang

2014

J. Am. Ceram. Soc.

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In this study, transparent amorphous MgNb 2 O 6 (MNO) films were fabricated via the sol-gel method to form an Al/MNO/ indium tin oxide/glass structure. The resistive switching (RS) behavior of the devices was investigated. From the DC voltage sweep test, the air-annealed MNO samples exhibited stable and reproducible bipolar resistive switching (BRS) behavior; however, the samples annealed in an O 2 -rich environment showed no RS property. These results suggest that the RS behavior of the MNO memory devices is highly related to the oxygen vacancy concentration and distribution within the MNO films. In addition, forming-free unipolar resistive switching (URS) behavior was observed when the MNO films were annealed under an N 2 H 2 atmosphere. In order to determine the origin of the BRS and URS behaviors, cross-sectional highresolution transmission electron microscopy images of the MNO samples were acquired. The RS behavior of the MNO films can be ascribed to the release and recombination of electrons and oxygen vacancies.

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Realization of One-Diode–Type Resistive-Switching Memory with Cr–SrTiO$_{3}$ Film

Cited by 21 publications

References 18 publications

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10⁹

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10⁹

Atomic Layer Deposition of W:Al₂O₃ Nanocomposite Films with Tunable Resistivity

Resistive Switching Behaviors of Sol‐Gel‐Derived MgNb₂O₆ Thin Films on ITO/glass Substrate

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Realization of One-Diode–Type Resistive-Switching Memory with Cr–SrTiO$_{3}$ Film

Cited by 21 publications

References 18 publications

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Atomic Layer Deposition of W:Al2O3 Nanocomposite Films with Tunable Resistivity

Resistive Switching Behaviors of Sol‐Gel‐Derived MgNb2O6 Thin Films on ITO/glass Substrate

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Product

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Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10⁹

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10⁹

Atomic Layer Deposition of W:Al₂O₃ Nanocomposite Films with Tunable Resistivity

Resistive Switching Behaviors of Sol‐Gel‐Derived MgNb₂O₆ Thin Films on ITO/glass Substrate