Realization of porous silicon membranes for gas sensor applications

Taliercio, Thierry; Dilhan, Monique; Massone, E.; Gué, Anne Marie; Fraisse, Bernard; Foucaran, A.

doi:10.1016/0040-6090(94)05616-l

Cited by 40 publications

(11 citation statements)

References 8 publications

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“…The dramatic change in electrical and optical properties of porous silicon (PS) upon adsorption of molecules to its surface has stimulated a huge amount of research for gas sensor application of PS (Anderson et al , 1990; Taliercio et al , 1995; Oton et al , 2003; Mizsei, 2007). One important parameter related with the sensing applications of PS is its specific surface area which vary from <1 m 2 /g in macroporous to ∼1,000 m 2 /g in microporous material (Salgado et al , 2006).…”

Section: Introductionmentioning

confidence: 99%

Capacitive detection of organic vapours at low ppm level by porous silicon: role of molecular structure in sensing mechanism

Hasan

Islam

et al. 2010

Sensor Review

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PurposeThe purpose of this paper is to present the dependence of capacitive sensing of organic vapours by porous silicon (PS) on its molecular structure for the realization of a organic vapour sensor, compatible with existing silicon technology, with desired miniaturization and selectivity.Design/methodology/approachThe method introduces large surface area of PS obtained by electrochemically etching of silicon wafer for characterization of organic vapours through capacitive sensing.FindingsThe method provides a comparative study of sensor response for organic vapour molecules of different structures and leads to an insight into the sensing mechanism.Research limitations/implicationsThe surface of PS has been stabilized by thermal oxidation process.Practical implicationsThe method is useful for the development of a simple, cost‐effective sensor for selective gas analysis.Originality/valueThe result is an outcome of regular experimental work carried out to observe the capacitive sensing behavior of PS for different organic vapours.

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Section: Introductionmentioning

confidence: 99%

Capacitive detection of organic vapours at low ppm level by porous silicon: role of molecular structure in sensing mechanism

Hasan

Islam

et al. 2010

Sensor Review

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“…The high surface area and unique optical properties of porous silicon (PS) films have been exploited for a variety of gas or vapor sensing applications. − Prepared by an electrochemical etch of single crystal silicon, the pore morphology, film thickness, and porosity can be easily controlled by appropriate adjustment of the preparation conditions . In addition, PS can be chemically modified or permeated with other materials to modify its physical, chemical, and electronic properties. − …”

Section: Introductionmentioning

confidence: 99%

Vapor Sensors Based on Optical Interferometry from Oxidized Microporous Silicon Films

Gao

et al. 2002

Langmuir

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Vapor sensors using thin porous silicon (PS) Fabry-Pe ´rot films were prepared and characterized. The detection method used in this work involves measurement of the intensity of reflected light from a microporous Si film as a function of analyte concentration. Analyte adsorption within the pores of the film causes the Fabry-Pe ´rot fringes to shift to higher wavelengths as a result of an increase in the average refractive index of the PS layer. Two transduction methodologies are employed: measurement of the intensity of reflected light using a low-power red diode laser source, and measurement of the spectrum of reflected light in the wavelength range 400-1000 nm, using a white light (tungsten) source. The effect of PS film thickness and porosity on sensitivity are systematically studied. A detection limit of 250 ppb for the analyte ethanol in a nitrogen gas carrier stream has been demonstrated. Experimental results suggest that capillary condensation is in part responsible for the high sensitivity of these vapor sensors.

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“…1,2 Lots of PS-based optoelectronic devices have been researched. [3][4][5][6] The PS formation techniques have been developed, including electrochemical anodization, 7-9 stain etching, 10-12 spark erosion, 13 and vapor etching technique. 14,15 Electrochemical anodization is the most commonly used among them.…”

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confidence: 99%

Manufacturing method for n-type porous silicon based on Hall effect without illumination

Lin

Lee

Tsai

2006

Applied Physics Letters

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Realization of porous silicon membranes for gas sensor applications

Cited by 40 publications

References 8 publications

Capacitive detection of organic vapours at low ppm level by porous silicon: role of molecular structure in sensing mechanism

Capacitive detection of organic vapours at low ppm level by porous silicon: role of molecular structure in sensing mechanism

Vapor Sensors Based on Optical Interferometry from Oxidized Microporous Silicon Films

Manufacturing method for n-type porous silicon based on Hall effect without illumination

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