Realization of single-transverse-mode VCSELs incorporating a built-in index guide

Qiu, Pingping; Wu, Bo; Fu, Peng; Li, Ming; Yan, Weinian; Jia, Rong; Xie, Yiyang; Kan, Qiang

doi:10.1016/j.optcom.2021.127450

Cited by 5 publications

(2 citation statements)

References 23 publications

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“…Moreover, the phenomenon of current crowding around the periphery of the active region, especially for larger-aperture VCSELs, further enhances the stimulation of the higher order modes. [12][13][14] In addition to multiple spectral peaks, multi-mode lasing creates nongaussian far-field beam profile in the form of eccentric "donut modes" with much wider divergence angles compared to the fundamental transverse mode. However, for many of the aforementioned applications, especially in the areas of sensing and display devices, a high-quality single-mode output beam along with a narrow and stable beam divergence is highly desired.…”

Section: Introductionmentioning

confidence: 99%

Polarization-stable single-mode multi-junction VCSELs with integrated anti-phase mode filter

Ghods,

Dummer,

Johnson

2023

Journal of Applied Physics

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In this paper, polarization-stable and spectrally single-mode operation of oxide-confined multi-junction vertical-cavity surface-emitting lasers (VCSELs) are achieved by using a non-circular integrated anti-phase transverse mode filter. A record-high single-mode output power is obtained by radially reducing effective mirror reflectivity at the surface areas where the higher order modes are expected to lase, leading to an increase in the threshold gain for these transverse modes, all the while minimal losses are introduced to the fundamental mode. The polarization control of such devices is achieved by using a non-circular mode filter in order to perturb the cylindrical symmetry of the cavity. An elliptically etched surface relief is shown to be effective in realizing a single-mode single-polarization device over a wide range of operating bias currents and temperatures. The continuous-wave light–current–voltage characteristics of 8-junction 940 nm VCSELs show single-mode output power >13 mW at room temperature, spectrally measured with a side-mode suppression ratio of >30 dB. This single-mode performance can be achieved depending on the ratio between the relief opening and the oxide aperture size. Additionally, the single-polarization behavior of such devices (with an extinction ratio of >15 dB) is shown to be dependent on the orientation of the elliptical mode filter, where the light is mainly polarized along the minor axis of the elliptical feature. Overall, combined with a multi-junction active region, the elliptical model filter is able to achieve highly efficient single-mode linearly polarized VCSELs.

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Section: Introductionmentioning

confidence: 99%

Polarization-stable single-mode multi-junction VCSELs with integrated anti-phase mode filter

Ghods,

Dummer,

Johnson

2023

Journal of Applied Physics

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“…Recently, there have been several reports on the study of optical pumping in semiconductor lasers and amplifiers. Research in optical pumping of semiconductor VCSELs and disk lasers have made considerable progress, and very high output powers have been reported [2][3][4][5][6]. Several schemes have also been reported on optical pumping of edge-emitting semiconductor lasers [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Optically-Pumped Coupled Ridge Waveguide Semiconductor Laser

VOGIRALA¹

2022

Preprint

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<p>In this paper, we propose an integrated design of an in-plane optically-pumped edge-emitting ridge-waveguide semiconductor laser, wherein the pump radiation is transferred to the active region of the laser through evanescent wave coupling from an adjacent coupled ridge waveguide. The proposed design of the laser is based on In1-xGaxAsyP1-y/InP heterostructure, with a pump at 1310 nm wavelength and lasing around 1550 nm. In order to simulate the steady-state characteristics of the optically-pumped semiconductor laser, we suitably modify the well-established Connelly’s model for semiconductor optical amplifiers (SOAs). The validity of the model for semiconductor lasers is established by showing that the evolution of simulated longitudinal modes and the output characteristics conform with the laser theory. For the chosen device parameters, under optimum operating conditions, the threshold pump power is found to be ≈ 70 mW with a high pump power conversion efficiency (i.e. output laser power/input pump power) of 61%. The proposed all-optically pumped semiconductor laser could be in the form of a 2-port fiber pig-tailed stand-alone device, without the need for any bias current. </p>

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A New Structural Design that Optimizes the Polarization and Mode Characteristics of Vertical Cavity Surface Emission Lasers

Meng,

Jia,

Dai

et al. 2023

2023 International Conference on Advances in Electrical Engineering and Computer Applications (AEECA)

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Realization of single-transverse-mode VCSELs incorporating a built-in index guide

Cited by 5 publications

References 23 publications

Polarization-stable single-mode multi-junction VCSELs with integrated anti-phase mode filter

Polarization-stable single-mode multi-junction VCSELs with integrated anti-phase mode filter

Optically-Pumped Coupled Ridge Waveguide Semiconductor Laser

A New Structural Design that Optimizes the Polarization and Mode Characteristics of Vertical Cavity Surface Emission Lasers

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