Realization with Fabrication of Double-Gate MOSFET Based Class-AB Amplifier

Pillay, Suvashan; Srivastava, Viranjay M.

doi:10.18178/ijeetc.9.6.399-408

Cited by 9 publications

(5 citation statements)

References 20 publications

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“…It means once an input signal is fed to the circuit, the power amplifier amplifies an input signal and enters at the settling time at 0.2 ms or less than that time. It shows the response of the settling time at 0.2 ms when the power amplifier is at the range of 0 V to the maximum voltage of 3 V. That is of good advantage because when this circuit is of use, the output signal is expected around less than 0.2 ms. Closed loop bandwidth [14] Class-B 0.9 m 3 MHz 22-32KHz [15] Class-E --4 MHz -- [16] Class-AB --1.609 MHz 4.8Hz-1.719MHz [17] Class-A 0.54 ms 1.23 MHz 3Hz-100kHz [18] Class-C --…”

Section: Modeling and Analysis Of Class-b Power Amplifiermentioning

confidence: 99%

Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET

Mbonane

Srivastava

2022

MSF

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This paper presents system performance indices for a class-B power amplifier using Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It also presents a comparative analysis of three power amplifiers using different switching devices, i.e. Bipolar Junction Transistor (BJT), MOSFET, and DG MOSFET. The MOSFET used in this research work is based on Silicon for n-MOSFET and SiO2 has been used as oxide layer. These power amplifiers are also being designed and simulated to test the speed and time (taken for each of these power amplifiers) to get the output signal when an input signal is applied. A comparison of these three power amplifier circuits is taken in the tabular form to conclude which power amplifier circuit performs better regarding its switching speed and the time. Switching speed relates with the time taken to amplify the signal, which is the same as its time to amplify the signal to a specific gain. Settling time for these three types of power amplifiers have also been tested and presented for the performance of these power amplifiers.

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Section: Modeling and Analysis Of Class-b Power Amplifiermentioning

confidence: 99%

Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET

Mbonane

Srivastava

2022

MSF

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“…The input signal was fed into the class-B power amplifier to test the class-B power amplifier's performance when DG MOSFETs were used with the SiO2 dielectric. This structure has a difference from the basic power amplifier [18][19][20].…”

Section: Circuit Design Of Proposed Class-b Amplifier With Dg Mosfetmentioning

confidence: 99%

Class-B Power Amplifier with Si-Based Double-Gate MOSFET: A Circuit Perspective

Mbonane

Srivastava

2022

KEM

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This research work designs a power amplifier with the use of Silicon-based Double-Gate (DG) MOSFET. It is a novel device used to amplify the input signal of an audio signal, etc. This research paper provides information on the problem identification in the existing models and its design objectives with its design constraints. It also reduces crossover distortion due to DG MOSFET instead of BJTs and MOSFETs in the class-B power amplifier. This is a low-power device for the mA range using SiO2 as a dielectric material.

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“…The double gate MOSFET has faster switching operation than planar MOSFETs. Since it can be driven independently, the double gate MOSFET is frequently seen as being desirable in power applications [9], [10]. When compared to silicon, graphene is described as a crystalline allotrope of carbon with two-dimensional properties.…”

Section: Introductionmentioning

confidence: 99%

Optimization of 14 nm double gate Bi-GFET for lower leakage current

Nizam

Hamid²,

Salehuddin³

et al. 2023

TELKOMNIKA

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In recent years, breakthroughs in electronics technology have upgraded the physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements in both quality and performance. Hence, the growth field effect transistor (GFET) is being promoted as one of the worthy candidates due to its superior material characteristics. A 14 nm horizontal double-gate bilayer graphene field effect transistor (FET) utilizing high-k and a metal gate, which are composed of hafnium dioxide (HfO2) and tungsten silicide (WSix) respectively. Silvaco ATHENA and ATLAS technology computer-aided design (TCAD) tools are used to simulate the design and electrical properties, while Taguchi L9 orthogonal arrays (OA) are used to optimize the electrical properties. The threshold voltage (VTH) adjustment implant dose, VTH adjustment implant energy, source/drain (S/D) implant dose, and S/D implant energy have all been investigated as process parameters, while the VTH adjustment tilt angle and the S/D implant tilt angle have been investigated as noise factors. When compared to the initial findings before optimization, the IOFF has a value of 29.579 nA/µm, indicating a significant improvement. Findings from the optimization technique demonstrate excellent device performance with an IOFF of 28.564 nA/µm, which is closer to the international technology roadmap for semiconductors (ITRS) 2013 target.

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Realization with Fabrication of Double-Gate MOSFET Based Class-AB Amplifier

Cited by 9 publications

References 20 publications

Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET

Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET

Class-B Power Amplifier with Si-Based Double-Gate MOSFET: A Circuit Perspective

Optimization of 14 nm double gate Bi-GFET for lower leakage current

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