Receiver-less optical clock injection for clock distribution networks

Debaes, Christof; Bhatnagar, Aparna; Agarwal, Diwakar; Chen, R.; Keeler, Gordon Arthur; Helman, N.C.; Thienpont, Hugo; Miller, David A. B.

doi:10.1109/jstqe.2003.813319

Cited by 65 publications

(43 citation statements)

References 17 publications

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“…Moreover, we were able to achieve a gain 4140, which is among the highest reported so far for Ge APDs, albeit with much more complex integration schemes. This demonstration may enable the development of new applications including secure quantum key distribution 30 , which requires photon counting receivers, as well as on-chip optical clocking 18 .…”

Section: Discussionmentioning

confidence: 99%

“…In most of the cases, as the photodiode dark current remains rather low (typically o1 mA), the receiver sensitivity using p-i-n photodiodes is limited by the noise of the TIA. The development of receiver-less, low capacitance photodetectors [17][18][19] (with capacitances typically of the order of BfF or below) is thus a real challenge. Furthermore, substantial power consumption reduction could be achieved by eliminating the need for a TIA.…”

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confidence: 99%

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Germanium avalanche receiver for low power interconnects

et al. 2014

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Recent advances in silicon photonics have aided the development of on-chip communications. Power consumption, however, remains an issue in almost all integrated devices. Here, we report a 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias. The avalanche photodiode scheme requires only simple technological steps that are fully compatible with complementary metal oxide semiconductor processes and do not need nanometre accuracy and/or complex epitaxial growth schemes. An intrinsic gain higher than 20 was demonstrated under a bias voltage as low as À 7 V. The Q-factor relating to the signal-to-noise ratio at 10 Gbit per second was maintained over 20 dB without the use of a trans-impedance amplifier for an input optical power lower than À 26 dBm thanks to an aggressive shrinkage of the germanium multiplication region. A maximum gain over 140 was also obtained for optical powers below À 35 dBm. These results pave the way for low-powerconsumption on-chip communication applications.

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Section: Discussionmentioning

confidence: 99%

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confidence: 99%

Germanium avalanche receiver for low power interconnects

et al. 2014

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“…One solution is to realize ultrasmallcapacitance photodetectors (PDs) and thus allow connection to a high impedance receiver circuit while maintaining a large resistance-capacitance (RC) bandwidth. This would lead to a reduction in electrical amplification or even its elimination (known as a receiver-less PD [5], [7], [8]), which promises an ultralow-energy on-chip photoreceiver.…”

Section: Introductionmentioning

confidence: 99%

Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver

Nozaki

Matsuo

Takeda

et al. 2017

IEICE Trans. Electron.

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SUMMARYAn ultra-compact InGaAs photodetector (PD) is demonstrated based on a photonic crystal (PhC) waveguide to meet the demand for a photoreceiver for future dense photonic integration. Although the PhC-PD has a length of only 1.7 μm and a capacitance of less than 1 fF, a high responsivity of 1 A/W was observed both theoretically and experimentally. This low capacitance PD allows us to expect a resistor-loaded receiver to be realized that requires no electrical amplifiers. We fabricated a resistor-loaded PhC-PD for light-to-voltage conversion, and demonstrated a kV/W efficiency with a GHz bandwidth without using amplifiers. This will lead to a photoreceiver with an ultralow energy consumption of less than 1 fJ/bit, which is a step along the road to achieving a dense photonic network and processor on a chip. key words: photonic crystal waveguide, photodetector, buried heterostructure, optical interconnection

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“…One of the challenges with PDs is to realize an ultrasmall capacitance and thus allow the resistance-capacitance (RC) bandwidth to be kept at a high level even during connection to a high impedance receiver circuit. This would lead to a reduction of electrical amplification or even its elimination (referred as a receiverless PD [4,8]). There would then be a strong demand for nano-structure PDs with a small size (that is, a small junction capacitance) while maintaining high responsivity.…”

Section: Introductionmentioning

confidence: 99%

Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

Nozaki¹,

Matsuo²,

Fujii³

et al. 2016

Optica

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The power consumption of a conventional photoreceiver is dominated by that of the electric amplifier connected to the photodetector (PD). An ultralow-capacitance PD can overcome this limitation, because it can generate sufficiently large voltage without an amplifier when combined with a high-impedance load. In this work, we demonstrate an ultracompact InGaAs PD based on a photonic crystal waveguide with a length of only 1.7 μm and a capacitance of less than 1 fF. Despite the small size of the device, a high responsivity of 1 A/W and a clear 40 Gbit/s eye diagram are observed, overcoming the conventional trade-off between size and responsivity. A resistor-loaded PD was actually fabricated for light-to-voltage conversion, and a kilo-volt/watt efficiency with a gigahertz bandwidth even without amplifiers was measured with an electro-optic probe. Combined experimental and theoretical results reveal that a bandwidth in excess of 10 GHz can be expected, leading to an ultralow energy consumption of less than 1 fJ/bit for the photoreceiver. Amplifier-less PDs with attractive performance levels are therefore feasible and a step toward a densely integrated photonic network/processor on a chip.

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Receiver-less optical clock injection for clock distribution networks

Cited by 65 publications

References 17 publications

Germanium avalanche receiver for low power interconnects

Germanium avalanche receiver for low power interconnects

Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver

Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

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