Recent advances in black phosphorus-based photonics, electronics, sensors and energy devices

Zhou, Ye; Zhang, Maoxian; Guo, Zhinan; Miao, Lili; Han, Su‐Ting; Wang, Ziya; Zhang, Xiuwen; Zhang, Han; Peng, Zhengchun

doi:10.1039/c7mh00543a

Cited by 306 publications

(133 citation statements)

References 221 publications

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“…As an emerging 2D material, black phosphorus (BP) with high charge‐carrier mobility and theoretical capacity of 2596 mA h g −1 has drawn significant attention . The research of BP in surface science and many electronic related fields, such as field effect transistors, sensors, capacitors, and LI(‐s)Bs shows great significance.…”

Section: Introductionmentioning

confidence: 99%

3D Chemical Cross‐Linking Structure of Black Phosphorus@CNTs Hybrid as a Promising Anode Material for Lithium Ion Batteries

Zhang

Wang

et al. 2020

Adv Funct Materials

106

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The existence of rechargeable lithium ion batteries with high operating voltage, high energy density, and excellent cycling performance are drawing increasing attention due to their viability to be used as portable power and in electrical applications. However, there is a considerable problem that the conductivity of the active material becomes poor due to the volume expansion under the condition of repeated circulation, which reduces the performance of the device, thus hindering its practical application. As an emerging 2D material, black phosphorus (BP) has drawn significant attention in the field of Li‐ion battery energy storage due to its large theoretical capacity of 2596 mA h g−1 and ability to absorb large amount of Li atoms. Here, a unique 3D conductive structure with the BP and carbon nanotubes (CNTs), displaying good stability and high conductivity for the fabrication of BP@CNTs hybrid‐based Li‐ion batteries is described. With strong trapping, good affinity, structure stable, and high adsorption for polyphosphorus, the developed BP@CNTs hybrid electrodes display high capacity, good electrical conductivity, and a stable cycle life. Additionally, the lithium ion batteries can illuminate the light emitting diode, proving that the materials have great potential for development of energy storage devices.

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Section: Introductionmentioning

confidence: 99%

3D Chemical Cross‐Linking Structure of Black Phosphorus@CNTs Hybrid as a Promising Anode Material for Lithium Ion Batteries

Zhang

Wang

et al. 2020

Adv Funct Materials

106

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“…Taking advantage of the strong SP mode of TiN nanohole films, the above demonstrations pave pathways toward multiple sensing applications. First, coupling nanohole arrays with low‐dimensional functional materials (e.g., hybrid perovskites, graphene, black phosphorus, and antimonene) is expected to modulate the plasmonic resonance, photoluminescence, and absorption for light harvesting or high‐resolution imaging at visible frequency 51,52. In addition, such tiny nanoholes at deep‐subwavelength scale will be advantageous to trace amounts detection and thus can be applied to biomedical sensors for molecule tracking and blood test 53–55.…”

Section: Resultsmentioning

confidence: 99%

Large‐Scale Plasmonic Hybrid Framework with Built‐In Nanohole Array as Multifunctional Optical Sensing Platforms

Wang

Shi

et al. 2020

Small

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Light coupling with patterned subwavelength hole arrays induces enhanced transmission supported by the strong surface plasmon mode. In this work, a nanostructured plasmonic framework with vertically built‐in nanohole arrays at deep‐subwavelength scale (6 nm) is demonstrated using a two‐step fabrication method. The nanohole arrays are formed first by the growth of a high‐quality two‐phase (i.e., Au–TiN) vertically aligned nanocomposite template, followed by selective wet‐etching of the metal (Au). Such a plasmonic nanohole film owns high epitaxial quality with large surface coverage and the structure can be tailored as either fully etched or half‐way etched nanoholes via careful control of the etching process. The chemically inert and plasmonic TiN plays a role in maintaining sharp hole boundary and preventing lattice distortion. Optical properties such as enhanced transmittance and anisotropic dielectric function in the visible regime are demonstrated. Numerical simulation suggests an extended surface plasmon mode and strong field enhancement at the hole edges. Two demonstrations, including the enhanced and modulated photoluminescence by surface coupling with 2D perovskite nanoplates and the refractive index sensing by infiltrating immersion liquids, suggest the great potential of such plasmonic nanohole array for reusable surface plasmon‐enhanced sensing applications.

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“…Figure 2b displays the corresponding transfer characteristics of the devices, revealing an am-bipolar behavior (p-type dominated) and n-type characteristic for BP and SnSeS, respectively. [4,18,19,33] Figure 2c shows the currentvoltage (I ds -V ds ) characteristics of BP/SnSeS heterostructure as a function of SnSeS channel length without a back-gate bias, where the BP channel is fixed at 15.5 µm. [4,18,19,33] Figure 2c shows the currentvoltage (I ds -V ds ) characteristics of BP/SnSeS heterostructure as a function of SnSeS channel length without a back-gate bias, where the BP channel is fixed at 15.5 µm.…”

mentioning

confidence: 99%

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

Luo

et al. 2018

Adv Elect Materials

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Graphene, transition metal-dichalcogenides (TMDs), and black phosphorus (BP) are widely exploited as building blocks for such vdWs heterostructure due to their unique electrical and optical properties. [8][9][10][11][12][13] Among these 2D materials, BP has attracted extensive attention because of its high carrier mobility (up to 1000 cm 2 V −1 s −1 at room temperature), moderate tunable direct bandgap on thickness (from 0.3 eV for bulk to 2.0 eV for monolayer), and intrinsic anisotropy arising from the puckered structure. [14][15][16][17] In the past years, a host of BP-based vdWs heterostructures such as graphene/ BP, TMDs/BP, and h-BN/BP architecture, have been fabricated to explore their electronic and photoelectric properties, which have shown promising applications for fieldeffect transistors (FETs), [18][19][20] photodetectors, [8,21,22] flexible devices, [23] memory device, [24] logic circuits, [25] and so on. In the most studied BP/MoS 2 heterostructure, [11,20,25] diverse diode characteristics, including back forward rectifying diode, Zener diode, and forward rectifying diode, have been obtained by BP thickness modulation. [20] A tunable multivalued logic performance was also realized in such heterostructure, providing a step forward toward the future logic applications. [25] Recently, tin-based dichalcogenide SnSe x S 1−x , [26][27][28][29][30][31][32] a layered semiconductor family with environmental friendly and low cost characteristics, has been explored for nanoelectronic applications. In addition, the wide bandgap ranging from ≈1 to ≈2.1 eV opens the possibility of developing versatile devices by band engineering. In this work, we present a realization of BP/SnSeS heterostructure and explore its carrier transport and logic characteristics for the first time. The heterostructure based on Te-doped BP exhibits high carrier mobility and an exceptional ambient stability. [33] Diverse diode characteristics are observed with the modulation of band alignment at BP/SnSeS interface. Furthermore, we demonstrated a multivalued logic state by varying BP length, suggesting that BP/SnSeS heterostructure has promising application in low-power multivalued logic circuits.The schematic of the proposed BP/SnSeS heterostructure is shown in Figure 1a. Both BP and SnSeS flakes were mechanically exfoliated from their bulk crystals. Using a dry transfer technique, the BP flake was first transferred onto the HfO 2 (30 nm)/ Si substrate with prepared electrical pads, and then exfoliated SnSeS flake was artificially stacked atop the BP flake forming BP/SnSeS heterostructure. After that, multiple metal electrodes were fabricated on the top of BP and SnSeS regions by van der Waals (vdW) heterostructures have attracted intensive attention due to their great potential in future functional electronic and optoelectronic devices. Here, a systematic electrical transport investigation on black phosphorus (BP)/SnSeS heterostructures is presented. The BP/SnSeS heterostructure shows diverse diode functional features by modulating BP cha...

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Recent advances in black phosphorus-based photonics, electronics, sensors and energy devices

Abstract: Recent progress in black phosphorus-based photonics, electronics, sensors and energy devices has been reviewed.

Cited by 306 publications

References 221 publications

3D Chemical Cross‐Linking Structure of Black Phosphorus@CNTs Hybrid as a Promising Anode Material for Lithium Ion Batteries

3D Chemical Cross‐Linking Structure of Black Phosphorus@CNTs Hybrid as a Promising Anode Material for Lithium Ion Batteries

Large‐Scale Plasmonic Hybrid Framework with Built‐In Nanohole Array as Multifunctional Optical Sensing Platforms

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

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