2022
DOI: 10.1002/aenm.202201733
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Recent Advances in CsPbX3 Perovskite Solar Cells: Focus on Crystallization Characteristics and Controlling Strategies

Abstract: All‐inorganic CsPbX3 (X = I, Br, Cl or their mixtures) perovskites attract enormous attention in recent years due to their excellent optoelectronic properties, outstanding thermal/light stability, and wide range of applications in electronic devices. Encouragingly, the reported power conversion efficiency of CsPbX3 perovskite solar cells (PSCs) rockets up from 2.9% in 2015 to the present 21.0%. In order to further promote the performance of CsPbX3 PSCs toward the Shockley–Queisser efficiency limit, it is impor… Show more

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Cited by 57 publications
(25 citation statements)
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References 207 publications
(388 reference statements)
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“…[40,41] The long-term stability of FA 0.83 Cs 0.17 PbI 3 films and PSCs is investigated under different conditions. [42][43][44][45] As shown in Figure 5a, the fading rate of the optimized sample is significantly slowed down during the aging process in ambient air (RH ≈ 35-40%, T = 25 °C). According to the XRD tracking result of the perovskite films (Figure S10, Supporting Information), the diffraction intensity of (001) plane for the control perovskite film decreased faster than that of the optimized perovskite film, indicating that air stability of perovskite film is improved after PSiOH modification.…”
Section: Resultsmentioning
confidence: 94%
“…[40,41] The long-term stability of FA 0.83 Cs 0.17 PbI 3 films and PSCs is investigated under different conditions. [42][43][44][45] As shown in Figure 5a, the fading rate of the optimized sample is significantly slowed down during the aging process in ambient air (RH ≈ 35-40%, T = 25 °C). According to the XRD tracking result of the perovskite films (Figure S10, Supporting Information), the diffraction intensity of (001) plane for the control perovskite film decreased faster than that of the optimized perovskite film, indicating that air stability of perovskite film is improved after PSiOH modification.…”
Section: Resultsmentioning
confidence: 94%
“…It has been reported that film quality and interface features are the key factors affecting device efficiency. 6,7 To date, many strategies have been proposed to improve film quality, such as additive strategies, interface engineering, anti-solvent engineering, preparation process improvement, etc . 7–10 Among these, interface engineering, especially buffer layer interface engineering, has been considered an effective method because it cannot only improve the quality of the perovskite film but is also expected to enhance the interface contact.…”
Section: Introductionmentioning
confidence: 99%
“…8−10 Since Wang et al used dimethylammonium iodide (DMAI) as an additive in the precursor solution for the deposition of high-quality CsPbI 3 perovskite films, significant progress has been obtained in CsPbI 3 PSCs in the past few years, and a high PCE of 21% was reported recently. 11,12 Even though the quality of CsPbI 3 perovskite films was largely improved using different methods, such as optimizing precursor components, using anti-solvents, and adjusting annealing processes, 13,14 the CsPbI 3 perovskite films still exhibit numerous pinholes because of the uncontrollable crystallization process of the perovskite films, leading to severe nonradiative recombination of charge carriers. 15 Therefore, compared to the PSCs based on the hybrid perovskites with similar bandgap energy, CsPbI 3 -PSCs still show relatively lower photovoltaic performance owing to the poor crystallization of CsPbI 3 perovskite films.…”
Section: ■ Introductionmentioning
confidence: 99%