Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

Pham, Phuong V.; Yeom, Geun Young

doi:10.1002/adma.201506402

Cited by 224 publications

(142 citation statements)

References 165 publications

(382 reference statements)

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“…54] which may be compatible with the donor character of Mn substituting Mo in MoSe 2 . This doping effect would require additional electrical measurements that are out of the scope of the present work.…”

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confidence: 68%

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe ₂ few-layers on SiO ₂ /Si

et al. 2019

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Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe 2 mono-and multi-layers on SiO 2 /Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO 2 /Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe 2 monolayers over 1 cm 2 . To grow MoSe 2 multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe 2 monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe 2 multilayers over 1 cm 2 . Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 % of Mn in MoSe 2 bilayers. * Electronic address: matthieu.jamet@cea.fr 1 arXiv:1906.03014v1 [cond-mat.mtrl-sci]

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confidence: 68%

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe ₂ few-layers on SiO ₂ /Si

et al. 2019

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“…In principle, doping on semiconductors is a process that involves local manipulation of its conductivity and charge density, and it is one of the main modification and modulation strategies in micro-and nano-electronics. The abundant doping strategies have been completely demonstrated on transition metal dichalcogenide (e.g., MoS 2 ) [17]. In general, the dopant donates electrons to graphene at ambient environment (named donor or n-type dopant), or it accepts electrons and leaving holes on graphene and then forming covalent bonding (named acceptor or p-type dopant) [6,7].…”

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confidence: 99%

A Library of Doped-Graphene Images via Transmission Electron Microscopy

Pham

2018

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Much recent work has focused on improving the performance of graphene by various physical and chemical modification approaches. In particular, chemical doping of n-type and p-type dopants through substitutional and surface transfer strategies have been carried out with the aim of electronic and band-gap tuning. In this field, the visualization of (i) The intrinsic structure and morphology of graphene layers after doping by various chemical dopants, (ii) the formation of exotic and new chemical bonds at surface/interface between the graphene layers and the dopants is highly desirable. In this short review, recent advances in the study of doped-graphenes and of the n-type and p-type doping techniques through transmission electron microscopy (TEM) analysis and observation at the nanoscale will be addressed.

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“…Strategies based on exposure to plasma, intercalation, and implantation were only demonstrated on multilayer MoS 2 [12][13][14] which is less interesting for optoelectronic applications due to its indirect bandgap. [17] Various molecular surface doping methods based on wet chemical treatment have been widely explored, but most of them are not air-stable and are difficult to control. [15,16] Chemical doping on the other hand, can be easily implemented due to the large surface to volume ratio of 2D materials.…”

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confidence: 99%

Air and Water‐Stable n‐Type Doping and Encapsulation of Flexible MoS₂ Devices with SU8

Kung

Hosseini

Dumcenco

et al. 2018

Adv Elect Materials

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a high fracture strain of at least 10% [10] make MoS 2 and other 2D semiconductors good candidates for applications in flexible electronic devices and circuits. [11] However, several technical challenges need to be overcome before flexible devices based on 2D materials become widely available. Among them, a stable and controllable doping method that is compatible with flexible substrates and low processing temperatures should be developed. Strategies based on exposure to plasma, intercalation, and implantation were only demonstrated on multilayer MoS 2 [12][13][14] which is less interesting for optoelectronic applications due to its indirect bandgap. Substitutional doping with, for example, rhenium or niobium during CVD growth result in doping levels that cannot be modified after growth and are difficult to implement locally and selectively. [15,16] Chemical doping on the other hand, can be easily implemented due to the large surface to volume ratio of 2D materials. [17] Various molecular surface doping methods based on wet chemical treatment have been widely explored, but most of them are not air-stable and are difficult to control. [18][19][20][21] While doping strategies based on functionalizing 2D materials with noble metal nanoparticles offer air stability, they do not result in good uniformity. [22,23] Stable and controllable doping could be achieved using Cs 2 CO 3 thin films by varying the film thickness [24] or phosphorus silicate glass (PSG) substrates through thermal and optical activation; [25] however, brittle Cs 2 CO 3 films and PSG substrates are not suitable for flexible electronics. So far, a practical technique for achieving air-stable and controllable doping of MoS 2 using materials and processes that are compatible with flexible electronics is missing.An effective encapsulation layer with good gas barrier performance is another key enabler for flexible devices based on MoS 2 and other 2D semiconductors. It is well known that the performance of MoS 2 FETs degrades in air due to surface adsorption of O 2 and H 2 O. [26][27][28] Al 2 O 3 , HfO 2 , and other high-κ inorganic dielectrics have been commonly used as encapsulation layers for layered 2D devices. [2,29] However, their brittleness makes them undesirable for applications in flexible electronics, where the encapsulation layer usually experiences the highest strain under bending. Hexagonal boron nitride, a layered insulating material, is a promising candidate for encapsulation of other 2D materials due to the clean and smooth interface free of dangling bonds, but encapsulation is performed using a material transfer process which has so far been restricted to laboratory scale. [30][31][32] Favorable mechanical and electrical properties motivate the use of 2D semiconductors in flexible electronic devices. One of the main challenges here is the absence of a practical doping strategy which should provide air-stable, tunable doping levels in a process with a low thermal budget. Here, it is shown that SU8, an epoxy-based photoresist, can be used ...

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Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

Cited by 224 publications

References 165 publications

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe ₂ few-layers on SiO ₂ /Si

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe ₂ few-layers on SiO ₂ /Si

A Library of Doped-Graphene Images via Transmission Electron Microscopy

Air and Water‐Stable n‐Type Doping and Encapsulation of Flexible MoS₂ Devices with SU8

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Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

Cited by 224 publications

References 165 publications

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe 2 few-layers on SiO 2 /Si

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe 2 few-layers on SiO 2 /Si

A Library of Doped-Graphene Images via Transmission Electron Microscopy

Air and Water‐Stable n‐Type Doping and Encapsulation of Flexible MoS2 Devices with SU8

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Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe ₂ few-layers on SiO ₂ /Si

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe ₂ few-layers on SiO ₂ /Si

Air and Water‐Stable n‐Type Doping and Encapsulation of Flexible MoS₂ Devices with SU8