Recent Advances in Graphene Epitaxial Growth: Aspects of Substrate Surface Modification Using Coatings

Ramazanov, Shikhgasan

doi:10.3390/coatings12121828

Cited by 2 publications

(1 citation statement)

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“…Though the exfoliation practice yielded high quality of graphene for research drives, it is not a sustainable technique for the industrialization of graphene based devices [1]. Towards such goal, it is believed that chemical processes such as Chemical Vapor Deposition (CVD) is more suitable as reported by researchers [6,7], other techniques for graphene synthesis include; plasmaenhanced chemical vapor deposition (PECVD) [8], micromechanical cleavage [9], reduction of graphene oxide [10], epitaxial growth on silicon carbide [11], and arc discharge method [12].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Graphene via ARC Discharge and Its Characterization: A Comparative Approach

Awoji,

Onoja,

Echi

2023

East Eur. J. Phys.

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Herein, few layer graphene was synthesize using two arc discharge chambers of different volumes to ascertain the influence of chamber size on the quality and yield of graphene. In both arc discharge chambers (A and B), graphite rods were ignited at arc current of 200 A and pressure of 500 Torr to produce vaporized carbon atoms which were deposited on the chamber wall. The synthesized graphene was characterized using the combined effect of UV spectroscopy, X-ray diffraction, Raman spectroscopy, scanning electron spectroscopy and transmission electron spectroscopy. It was observed that, an increase in the chamber size led to an increase in the number of graphene layers (4 – 6 layers) and an increase in the crystalline size D (9.6 – 17.4 nm) as revealed by XRD results. Raman analysis shows lower value of ID/IG of 0.62 indicating the presence of lower defect in chamber A as compared to the ID/IG value of 0.93 observed in chamber B. A graphene yield of 0.96 g was obtained from chamber A while 0.67 g of the same product was obtained from chamber B. The fabricated arc discharge systems suggest that a larger chamber size could promote a better yield of graphene on an industrial scale. Hence, the research is relevant to the development of larger amounts of quality FLG for industrial device applications.

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