Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing

“…Ultra-wide bandgap gallium oxide (Ga 2 O 3 ), with remarkable thermal and chemical stability, is suitable for many promising areas of applications, such as solar-blind photodetectors, gas sensors, solar cells, power electronic devices, and so on. [1][2][3][4][5][6][7] There are six different crystalline structures of Ga 2 O 3 , including a-, b-, g-, d-, eand k-Ga 2 O 3 . [8][9][10] In comparison, the most stable phase among them is monoclinic b-Ga 2 O 3 with a direct bandgap of B4.9 eV.…”

Theoretical insights into the defect performance of the wide bandgap semiconductor BaS

“…Owing to its excellent optoelectronic properties, b-Ga 2 O 3 is one of the most promising UWBG semiconductors currently for the applications of solar-blind ultraviolet (UV) photodetection and high-power and microwave devices. 69,70 It can be seen from Table 1 that some fundamental physical parameters including bandgap (the direct bandgap is 5.27 eV for BaS), electron effective mass, and electron density are comparable between BaS and b-Ga 2 O 3 ; therefore, we expect that BaS would play an alternative role to b-Ga 2 O 3 in the abovementioned applications. On the other hand, BaS is very stable, and its component elements Ba and S are non-toxic, cheap, and earth-abundant.…”

In Operando Quantification of Single and Multiphoton Photocurrents in GaP and InGaN Photodetectors with Phase-Modulated Femtosecond Light Pulses

“…They are expected to usher applications in high-power, high-speed, and robust optoelectronic devices that can operate in harsh environments . Wide band gap semiconductors are also emerging as attractive materials for integrated photonics, nanophotonics, and nonlinear optoelectronics. − In this context, phosphides and nitrides of gallium (GaP and GaN) are important. , Different nonlinear optical properties of these materials, such as harmonic generation, self-phase modulation, four-wave mixing, and multiphoton absorption, have been extensively investigated. ,,− Among them, multiphoton absorption is relevant for the functionality of photodetectors, lasers, and LEDs.…”