Recent Advances in the Bias Stress Stability of Organic Transistors

Abstract

In this progress report, recent advances in the development of organic transistors with superior bias stress stability and in the understanding of the charge traps that degrade device performance under prolonged bias stress are reviewed, with a particular focus on materials science and engineering methods. The phenomenological aspects of bias stress effects and the experimental methods for investigating charge traps are described. The recent progress in the bias stress stability of organic transistors is discussed in terms of those components that are the main focus of attempts to improve bias stress stability, i.e., organic semiconductor layers, gate dielectrics, and source/drain contacts. A brief summary of this progress is presented and the outlook for future research in this field is assessed. This report aims to summarize recent progress in this field and to provide some guidelines for studying bias stress-induced charge-trapping phenomena.

Direct detection of 5-MeV protons by flexible organic thin-film devices

“…We choose low-bias operations as the best trade-off for this class of sensors for three different reasons. First, organic materials suffer from bias stress even at a few bias volts ( 33 ) (see fig. S2), and working at low voltages can improve the reliability and the stability of the sensor.…”

High-performance polymer field-effect transistors: from the perspective of multi-level microstructures

“…Furthermore, the development of high-performance polymer FETs requires not only molecular design and mechanism study but also practical applications in related functional devices. Addition of molecular additives, such as dopants, crosslinkers, and photosensitizers, is an effective method to solve the complications in practical applications, including large-scale fabrication, 105,106 contact resistances, 107 long-term stability, 108,109 high-speed applications, 110 etc. For instance, contact doping by adding molecular dopants is one of the most used techniques to reduce contact resistance and improve transistor performance in both inorganic and organic FETs.…”

Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers

“…However, the organic semiconductors in OTFTs are vulnerable to charge traps [16][17][18] and leakage current, which frequently occur in oxide dielectrics (i.e., silicon dioxide (SiO 2 ) [19][20][21], aluminum oxide (Al 2 O 3 ) [22,23], and hafnium oxide (HfO 2 ) [24]). Owing to the strong susceptibility of Micromachines 2021, 12, 565 2 of 17 organic semiconductors to charge traps, OTFTs suffer from instability, which causes currentvoltage sweep hysteresis [25][26][27], shifts in the threshold voltage (V TH ) [28,29], and bias stress effects [30][31][32][33]. To address these issues, the treatment of the hydroxylated surfaces of dielectrics is crucial.…”