Recent Advances in Vertically Aligned Nanowires for Photonics Applications

Chang, Sehui; Lee, Gil Ju; Song, Young Min

doi:10.3390/mi11080726

Cited by 23 publications

(18 citation statements)

References 124 publications

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“…Metal halide perovskite (MHP) nanowire arrays have shown excellent performance in optoelectronic applications such as lasers, LEDs, solar cells, and photodetection. − Vertically aligned nanowire arrays offer several advantageous properties, such as enhanced optical absorption and emission along the direction orthogonal to the substrate, which is essential for solar cells and light-emitting diodes, − as well as technical advantages including higher nanowire density and scalable device processing. For example, free-standing vertically aligned nanowires of Si, ZnO, GaAs, and InP have achieved excellent performance in various optoelectronic fields. − However, the growth of free-standing vertically aligned MHP nanowire arrays is difficult.…”

Section: Introductionmentioning

confidence: 99%

Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures

et al. 2022

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Vertically aligned metal halide perovskite (MHP) nanowires are promising for various optoelectronic applications, which can be further enhanced by heterostructures. However, present methods to obtain free-standing vertically aligned MHP nanowire arrays and heterostructures lack the scalability needed for applications. We use a low-temperature solution process to prepare free-standing vertically aligned green-emitting CsPbBr 3 nanowires from anodized aluminum oxide templates. The length is controlled from 1 to 20 μm by the precursor amount. The nanowires are single-crystalline and exhibit excellent photoluminescence, clear light guiding and high photoconductivity with a responsivity of 1.9 A/W. We demonstrate blue-green heterostructured nanowire arrays by converting the free-standing part of the nanowires to CsPbCl 1.1 Br 1.9 in an anion exchange process. Our results demonstrate a scalable, self-aligned, and lithography-free approach to achieve high quality free-standing MHP nanowires arrays and heterostructures, offering new possibilities for optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures

et al. 2022

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“…Here, vertical alignment is defined as the situation in which all apices of the structures are in the same plane, parallel to the flat (i.e. horizontal) substrate surface [47].…”

Section: Introductionmentioning

confidence: 99%

Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones

et al. 2022

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Convex cylindrical silicon nanostructures, also referred to as silicon nanocones, find their value in many applications ranging from photovoltaics to nanofluidics, nanophotonics, and nanoelectronic applications. To fabricate silicon nanocones, both bottom-up and top-down methods can be used. The top-down method presented in this work relies on pre-shaping of silicon nanowires by ion beam etching followed by self-limited thermal oxidation. The combination of pre-shaping and oxidation obtains high-density, high aspect ratio, periodic, and vertically aligned sharp single-crystalline silicon nanocones at the wafer-scale. The homogeneity of the presented nanocones is unprecedented and may give rise to applications where numerical modeling and experiments are combined without assumptions about morphology of the nanocone. The silicon nanocones are organized in a square periodic lattice, with 250 nm pitch giving arrays containing 1.6 billion structures per square centimeter. The nanocone arrays were several mm2 in size and located centimeters apart across a 100-mm-diameter single-crystalline silicon (100) substrate. For single nanocones, tip radii of curvature < 3 nm were measured. The silicon nanocones were vertically aligned, baring a height variation of < 5 nm (< 1%) for seven adjacent nanocones, whereas the height inhomogeneity is < 80 nm (< 16%) across the full wafer scale. The height inhomogeneity can be explained by inhomogeneity present in the radii of the initial columnar polymer mask. The presented method might also be applicable to silicon micro- and nanowires derived through other top-down or bottom-up methods because of the combination of ion beam etching pre-shaping and thermal oxidation sharpening. Graphic abstract A novel method is presented where argon ion beam etching and thermal oxidation sharpening are combined to tailor a high-density single-crystalline silicon nanowire array into a vertically aligned single-crystalline silicon nanocones array with < 3 nm apex radius of curvature tips, at the wafer scale.

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“…Нитевидные нанокристаллы (ННК) A III B V являются перспективными объектами для создания на их основе различных элементов и устройств фотоники, микро-и наноэлектроники, микромеханики и сенсорики благодаря сочетанию уникальных электронных, оптических и механических свойств [1][2][3][4]. Создание устройств на основе ННК требует разработки технологий управления их основными характеристиками (как вместе, так и по отдельности): размерами (длиной, диаметром), формой, химическим составом, легированием, плотностью [5].…”

Section: Introductionunclassified

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

Шандыба¹,

Черненко²,

Балакирев³

et al. 2022

Физика И Техника Полупроводников

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This paper presents the results of experimental studies of the effect of the Ga ion dose during ion-beam treatment of the Si(111) surface using the focused ion beam technique on the GaAs nanowires epitaxial growth processes. A significant difference is revealed between the parameters of nanowire arrays formed on modified and unmodified areas of the Si substrate in this way. It is shown that changing the Ga ions dose from 0.052 to 10.4 pC/μm^2 during ion-beam treatment makes it possible to form GaAs nanowires arrays with a different set of parameters in a single technological cycle with a high degree of localization. The regularities of the influence of the dose of Ga ions during surface modification on the key characteristics of GaAs nanowires (density, diameter, length, and orientation with respect to the substrate surface) are experimentally established.

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Recent Advances in Vertically Aligned Nanowires for Photonics Applications

Cited by 23 publications

References 124 publications

Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures

Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures

Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

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