In organic electronic devices, the interfacial dipole at organic/metal interfaces is critical in determining the carrier injection or extraction that limits the performance of the device. A novel technique to enable the direct measurement of underburied dipoles is developed and demonstrated. By tilting the shadow mask by a small angle, metal atoms diffuse into the opening slit to form an ultrathin metal layer during the evaporation process. As the ultrathin metal layer cannot screen out the dipole-induced surface work function change, the dipole strength and direction at the organic/metal interface can be revealed. It was found that the polarity of the organic material, the Fermi-level pinning and the interface morphology all play important roles in dipole formation. By comparing the energy level shifts at the organic/pre-deposited metal and organic/post-deposited metal interfaces, the dipole formed by molecular interactions could be distinguished from the dipole formed by Fermi-level pinning. NPG Asia Materials (2017) 9, e379; doi:10.1038/am.2017.56; published online 19 May 2017
INTRODUCTIONIn organic electronic devices, such as organic solar cells and organic light-emitting diodes, energy-level alignment at the organic/metal interface is critical for device performance because it determines the carrier injection barrier and device built-in voltage. 1,2 A small energylevel offset between the organic material's charge transport level and the metal's Fermi level is always favored to form an ohmic contact at the interface. Therefore, metals with low work function (WF), such as Ba, Ca, Li, Cs and Al, are popular choices for cathodes to facilitate electron injection or extraction. 3-5 However, low WF metals are intrinsically unstable. As a consequence, much effort has been made to develop electrode modification materials to enable the use of stable but high WF metals as cathodes. 6 Both inorganic materials, such as alkali-metal salts and metal oxides, and organic materials, such as organic surfactants, have been successfully applied in devices. [7][8][9][10][11][12] Through the formation of a dipole layer at the organic/metal interface, induced by the interfacial interaction, the interfacial energy-level alignment is modified, leading to a reduction in the charge injection barrier. 1,13 Various molecular structures are being examined to find the best modification materials for different devices.To select the desired interfacial material, the most common characterization is measuring the WF change on substrates of the cathode metal before and after depositing the interfacial materials on top 14,15 (Figure 1a). A reduced WF indicates that the electron injection barrier is lowered and hence can be used at the cathode. In contrast, an increased WF implies that the material can be used to enhance hole injection at the anode. The deduction is straightforward for inverted devices for which the layer deposition sequence, that is, cathode