Recent progress in development of GaN-based transistors for gas and bio-sensing applications and amorphous IGZO layers for use thin film transistors (TFTs) on flexible substrates, including paper, is presented. For the detection of gases such as hydrogen, the gateless GaN transistors are typically coated with a catalyst metal such as Pd to increase the detection sensitivity at room temperature. Functionalizing the surface with oxides, polymers and nitrides enhances the detection sensitivity for gases and ionic solutions. The use of enzymes or antibody layers on the surface leads to highly specific detection of a range of antigens of interest in the medical and security fields. We give examples showing sensitive detection of glucose, prostate cancer and breast cancer markers and the integration of the sensors with wireless data transmission systems. The amorphous transparent conducting oxide InZnGaO 4 (IGZO) is attracting attention because of its high electron mobility, high transparency in the visible region and its ability to be deposited with a wide range of conductivities. This raises the possibility of making low-cost electronics on a range of arbitrary surfaces, including paper and plastics. Remaining obstacles to use of IGZO TFTs are presented.
Applications of GaN Based Electronics and PhotonicsOn the photonics side, the AlGaInN materials system, consisting of the AlGaN/GaN, InAlN/GaN and InGaN/GaN heterostructures and the GaN,AlN and InN binaries is widely used in blue/violet/white/UV light emitting diodes for stoplights and full color displays, blue and green lasers for use in high density CD-ROM storage and high resolution printers. The main applications for GaN-based high power microwave transistors is in phased array radar systems and wireless communication systems, while the low noise, radiation hard transistors can be used in high temperature sensors and space-flight instrumentation (1)