Recent calculations and measurements of I–V relations in simple devices based on thin nano versus thick layers of semiconductors with mobile acceptors or donors

We demonstrate the applicability of the linear diffusion model recently proposed for the current-voltage, Igb-Ugb, characteristics of blocking grain boundaries in solid electrolytes to various oxygen-ion and proton conductors: the model precisely reproduces the Igb-Ugb characteristics of La-, Sm-, Gd-, and Y-doped ceria as well as Y-doped barium zirconate to provide accurate explanations to the "power law" behavior of the Igb-Ugb relationship, i.e. Igb ∝ Ugb(n), experimentally observed. The model also predicts that the grain-boundary potential, Ψgb, in doped ceria weakly depends on temperature, if the trapped charge remains constant, and that the value of Ψgb can be determined from the value of the power n. Furthermore, the model provides a plausible explanation for the increase in the Ψgb with temperature observed for the proton conductor in which the concentration of the charge carrier decreases with temperature. Hence, it is evident that the linear diffusion model is robust and applicable to grain boundaries in a large variety of practically important solid electrolytes.

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“…The diffusion equation which concerns such a situation is well established [30][31][32][33][34] and is given in great detail in ref. 35.…”

Section: The Linear Diffusion Equation For the Current Across The Gra...mentioning

confidence: 99%

A linear diffusion model for ion current across blocking grain boundaries in oxygen-ion and proton conductors

Kim

Khodorov

Lubomirsky

et al. 2014

Phys. Chem. Chem. Phys.

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“…The doping is metallurgical, and as such determined during the fabrication process. , Normally, the motion of impurities in an operating semiconductor device is undesirable, unless purposely designed, as in Li:Si devices . However, the coupled motion of charged dopants and carriers in an externally applied electric field within a semiconductor − has been demonstrated to be a viable mechanism for a memristor. − …”

mentioning

confidence: 99%

Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors

et al. 2012

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TaO(x)-based memristors have recently demonstrated both subnanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaO(x) memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.

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“…We assume that the ionization reaction constant (K) and characteristic time for recombination (τ ) are concentration independent. The continuity equation for this process, assuming steady state is [16,18]…”

Section: Recombination Reactionmentioning

confidence: 99%

“…These values are fixed either by the metallic electrodes or by surface states [17]. In the first case the boundary concentrations are pinned by the work function of the contacting electrodes [11,16]. If the concentration of the surface states in the SC is high and the Fermi level lies within these states then the Fermi level is pinned in the surface states and the boundary concentrations (p 0 and c 0 ) are, again, fixed.…”

Section: Boundary Conditionsmentioning

confidence: 99%

“…We have previously reported on some I -V relations and defect distributions in a M 1 |SC|M 2 device (M 1 and M 2 being inert metallic electrodes) where the contact potential at the two electrodes either vanish or lead to equal depletion. We have also compared the results with those obtained in a M 1 |SC|M 2 device, where the ionic defects of the SC are mobile but hopping is not allowed [11,16,17]. Here, the discussion is extended to include a wide range of ionization reaction constants, the very effect of a finite ionization reaction rate, hopping probability and more extensive discussion of the dependence on thickness, as well as providing a deeper insight into the theoretical considerations and calculations.…”

Section: Introductionmentioning

confidence: 99%

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Properties of solid state devices with significant impurity hopping conduction

Gil¹,

Tsur²,

Umurhan³

et al. 2008

J. Phys. D: Appl. Phys.

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A device of the form metal1 |semiconductor| metal2 is discussed, in which the semiconductor is assumed to be p-type, donors are not present, yet electron hopping in the impurity band is possible due to partial occupancy. The two electrodes (metal1 and metal2) are assumed to be asymmetric (contact potentials wise) one leading to depletion and the other one with zero contact potential. The defect distribution and I–V relations are solved numerically assuming steady state. The effects of sample thickness, ionization–recombination reaction constant, recombination rate and hopping mobility are discussed. Different thicknesses, from nano to macro, are considered. The results are compared with a classical model in which the acceptors are fully ionized and no hopping is possible. The classical model is equivalent to a device with a Schottky junction on one side. The question of the existence of regions with local neutrality (l.n.) is discussed, and the concentration profile there is solved for the cases of strict l.n. and quasi-local neutrality.It is found that the sample thickness and ionization–recombination reaction constant have significant effects on the I–V relations of this device, whereas the hopping mobility and recombination time have a lesser effect. A comparison with the classical model shows that though the addition of the hopping conduction mechanism may have a significant effect on the defect distribution, the effects on the I–V relations are usually quantitative only, and not qualitative, as long as the ionization–recombination reaction constant is not too high. Hence, investigating the I–V relations is not sufficient to decide if hopping occurs in a sample. To distinguish between the classical model and the present model, one needs further experimental knowledge about the sample in question.

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Recent calculations and measurements of I–V relations in simple devices based on thin nano versus thick layers of semiconductors with mobile acceptors or donors

Cited by 8 publications

References 4 publications

A linear diffusion model for ion current across blocking grain boundaries in oxygen-ion and proton conductors

A linear diffusion model for ion current across blocking grain boundaries in oxygen-ion and proton conductors

Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors

Properties of solid state devices with significant impurity hopping conduction

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Recent calculations and measurements of I–V relations in simple devices based on thin nano versus thick layers of semiconductors with mobile acceptors or donors

Cited by 8 publications

References 4 publications

A linear diffusion model for ion current across blocking grain boundaries in oxygen-ion and proton conductors

A linear diffusion model for ion current across blocking grain boundaries in oxygen-ion and proton conductors

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

Properties of solid state devices with significant impurity hopping conduction

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Product

Resources

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Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors