Recent development and advances in Photodetectors based on two-dimensional topological insulators

Wang, Bing; Zhong, Shipeng; Xu, Peng; Zhang, Han

doi:10.1039/d0tc03410j

Cited by 48 publications

(20 citation statements)

References 420 publications

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“…The topological energy-band architecture of 3D TIs is characterized by the insulating bulk gap and gapless metallic surface state. Its linear dispersion of the surface state could trigger many intriguing physical properties, providing the potential opportunity for fabricating advanced optoelectronic devices, especially broadband PDs. , Taking Bi 2 Te 3 as an example, the ultrahigh carrier mobility, strong optical absorption behavior, and moderate bulk energy bandgap (∼0.15 eV) make it a suitable candidate for long-wave infrared photodetection at room temperature. Moreover, the robust metallic Dirac surface state of Bi 2 Te 3 protected by time-reversal symmetry not only can effectively suppress electron backscattering but also provides a topological protection for itself, allowing it to retain fast carrier transport capacity and long-term chemical stability at air ambience. , In addition, the natural layered crystal structure of Bi 2 Te 3 consists of five atomic layers Te(1)–Bi–Te(2)–Bi–Te(1), where the bonding within each quintuple layer (QL) is via strong covalent bonding and that between the QLs is via weak van der Waals forces .…”

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confidence: 99%

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

et al. 2022

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Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi 2 Te 3 ) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi 2 Te 3 layer, a Gr/Bi 2 Te 3 / GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 10 12 Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light−matter interaction at the high-quality heterointerface of Bi 2 Te 3 /GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi 2 Te 3 for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

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confidence: 99%

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

et al. 2022

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“…V–VI semiconductors are also 2D topological insulators (TIs). [ 37 ] Among the available materials, TIs has a high sensitivity and wide spectrum detection ability, with a high carrier mobility and good environmental stability. Huang et al [ 38 ] fabricated a robust photodetector by Bi 2 S 3 nanosheet films, with the high responsivity at a lower bias potentials and strong long‐term stability of the switching behavior without any external protection in alkaline solution.…”

Section: D Materials For Ir Detectionmentioning

confidence: 99%

2D Material‐Based Photodetectors for Infrared Imaging

2021

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As a dynamic research field, infrared (IR) detection and imaging presents broad prospect in spectra‐chemistry, biomedicine, and artificial intelligence. Due to the excellent properties, 2D materials are expected to overcome the serious manufacturing cost and integration problems of Si‐based photodetectors, providing opportunities for the universal application of IR imaging. Up to now, dozens of 2D materials are used to manufacture IR photodetectors. The ultrathin and flexible 2D material‐based optoelectronic devices, which are easy to machine and integrate, will demonstrate the application beyond imagination. In this review, first, the principle of IR detection and imaging is introduced, in which the single pixel and array imaging are discussed. Then the promising materials, toward broadband detection and special detection, are introduced in brief and the devices for imaging are summarized, including the mode based on light intensity and the strategy originated from polarization. Finally, it is prospected that the 2D materials have the capability to show the integral IR world, which contains large amount of valuable information such as molecular vibration spectra and significant applications such as artificial retina.

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“…[ 10 ] The relatively low carrier mobility is also a drawback of TMDs. [ 124,126–129 ] With narrower bandgaps and broadband nonlinear optical response, TIs are employed in various photonic applications, [ 130–134 ] but they also suffer from low carrier mobility. [ 135,136 ] In addition, long recovery time of TIs remains as a problem for ultrafast photonics.…”

Section: Introductionmentioning

confidence: 99%

2D Xenes: Optical and Optoelectronic Properties and Applications in Photonic Devices

Liu

Yin

et al. 2022

Adv Funct Materials

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In recent years, tremendous attention has been paid to the investigation of single-element 2D materials. These 2D materials mainly consist of elements from group IV and group V such as silicene, phosphorene, and antimonene. Together with other four elements from groups III and VI, they are classified as 2D Xenes and exhibit rich optical and optoelectronic properties such as broadband optical response, strong nonlinearity, ultrafast recovery time, and layer-dependent bandgap. 2D Xenes can be easily integrated with microfibers and other optical platforms. On the basis of their attracting characteristics, 2D Xenes have been utilized in various functional devices. In this review, the optical and optoelectronic properties of the most intensively studied 2D Xenes are introduced. Their applications in photonic devices including all-optical modulators, wavelength converters, ultrafast lasers, and photodetectors are explicitly explored. Finally, the challenges and future perspectives of photonic devices based on 2D Xenes are discussed.

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Recent development and advances in Photodetectors based on two-dimensional topological insulators

Abstract: Photodetector is a kind of optoelectronic device with excellent photoelectric conversion ability. It has especially important applications in many fields, such as image sensing, video imaging, optical communication, aerospace, environmental...

Cited by 48 publications

References 420 publications

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

2D Material‐Based Photodetectors for Infrared Imaging

2D Xenes: Optical and Optoelectronic Properties and Applications in Photonic Devices

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Recent development and advances in Photodetectors based on two-dimensional topological insulators

Abstract: Photodetector is a kind of optoelectronic device with excellent photoelectric conversion ability. It has especially important applications in many fields, such as image sensing, video imaging, optical communication, aerospace, environmental...

Cited by 48 publications

References 420 publications

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

2D Material‐Based Photodetectors for Infrared Imaging

2D Xenes: Optical and Optoelectronic Properties and Applications in Photonic Devices

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Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium