Recent developments in ion beam-induced nanostructures on AIII-BV compound semiconductors

Abstract

Ion-beam sputtering of two-component substrates constitutes an alternative route for the nanofabrication of 3D (three-dimensional) structures, such as quantum dots or nanowires with unique properties like a high degree of local ordering. To allow for feasibility in precision manufacturing, control and optimization it is necessary to completely understand all the phenomena behind the evolution of nanostructures. The formation and development during the ion irradiation of similar features has been extensively studied for almost a half of century, but only over the last few years have new results appeared, ones stimulating real progress within this field. In this paper we report on the growth of such 3D nanostructures after low energy ion-beam sputtering on specific materials belonging to the group of AIII-BV binary compound crystals. Special emphasis is given to the role of sample temperature (during irradiation or post-annealing) on the evolution of nanostructure patterns and their ordering. The formation of such systems will be explained as seen from a phenomenological perspective.

Surface nanopatterning by ion beam irradiation: compositional effects

“…In particular, the induced dot patterns formed on the topmost GaSb layer were successfully transferred to an underlying Co layer resulting into an array of magnetic nanoparticles displaying shortrange hexagonal ordering [171]. Also, studies on other semiconductor compound surfaces such as GaAs, InP, and InSb were done using low-energy or medium-energy ion beams [16,172,173].…”

“…Thus, IBI has been successfully applied to induce patterns on a wide range of materials. Among them, we can mention: metals [4,8], semiconductors [9][10][11][12][13][14][15][16], oxides [17,18] ionic crystals [19,20], and polymers [21][22][23]. In addition to this versatility, among the main attributes of IBI nanopatterning, we can also mention the large area that can be patterned, the short processing times and, finally, its cost-effective production.…”

Special issue on surfaces patterned by ion sputtering

“…angle for ripple patterning. The behavior of binary compounds at low energies using noble gas ions has been studied in [14] and [15] for the cases of molybdenum silicides and A III -B V semiconductors, respectively.…”

“…In both works, interesting results are reported on the existence of a threshold incidence angle for ripple patterning. The behavior of binary compounds at low energies using noble gas ions has been studied in [14] and [15] for the cases of molybdenum silicides and A III -B V semiconductors, respectively. Alternative irradiation setups are analyzed in [16], where the effects of two simultaneous ion beams or of altering the substrate orientation are studied.…”

Variable range hopping conductivity in molecular beam epitaxial InSb

“…Higher Ar + beam energies, 4 keV used in [17][18][19] resulted in metallic indium on the surface, identified by structural measurements such as atomic force microscopy (AFM) and energy dispersive x-ray spectroscopy. Recent work, see [20][21][22] using a range of ion systems: Ar + , Kr + , Xe + and Ga + at 5 keV resulted in nano-pillar growth. This was identified using structural measurements including in-situ AFM, secondary electron microscopy (SEM) and transmission electron microscopy.…”