1995
DOI: 10.1016/s1079-4050(06)80005-0
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Recent Developments in Quantum-Well Infrared Photodetectors

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Cited by 73 publications
(24 citation statements)
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“…Thanks to PtSi Schottky barrier IR properties, great attention was dedicated to FPA arrays based on integrated silicon Schottky sensors which were showing reliable monolithic silicon CMOS-integrated technology and high uniformity in detectivity, but were operating in the short wavelength region and with the limitation of low working temperatures. Similar considerations can be made for the long wavelength GaAs/GaAlAs Multi-Quantum Well IR FPA arrays [16], which, although if with lower quantum efficiency, are close to CMT performances even showing higher homogeneity and stability in sensitivity thanks to a more reliable manufacturing process, but with the strong limitation of working at lower temperatures (<77 K). This requires the use of Cryogenic structures with high cost of purchasing and maintenance, therefore improving the restriction of the main use to military applications, limiting the market size, and, as consequence, the product growth.…”
Section: Focal Plane Array (Fpa)mentioning
confidence: 61%
“…Thanks to PtSi Schottky barrier IR properties, great attention was dedicated to FPA arrays based on integrated silicon Schottky sensors which were showing reliable monolithic silicon CMOS-integrated technology and high uniformity in detectivity, but were operating in the short wavelength region and with the limitation of low working temperatures. Similar considerations can be made for the long wavelength GaAs/GaAlAs Multi-Quantum Well IR FPA arrays [16], which, although if with lower quantum efficiency, are close to CMT performances even showing higher homogeneity and stability in sensitivity thanks to a more reliable manufacturing process, but with the strong limitation of working at lower temperatures (<77 K). This requires the use of Cryogenic structures with high cost of purchasing and maintenance, therefore improving the restriction of the main use to military applications, limiting the market size, and, as consequence, the product growth.…”
Section: Focal Plane Array (Fpa)mentioning
confidence: 61%
“…7,8 The bandgap discontinuity of the two materials creates quantized subbands in the potential wells associated with conduction bands or valence bands. The structure parameters are designed so that the photo excited carriers can escape from the potential wells and be collected as photocurrent.…”
Section: Examples Of Infrared Imaging Technologies For Tissue Imagingmentioning
confidence: 99%
“…GaAs and Ga 1-x Al x As [5][6][7]. A fundamental characteristic of QWIPs is that infrared radiation will be absorbed and detected only if there is an electric field component perpendicular to the layers.…”
Section: Qwip Fpa Processingmentioning
confidence: 99%