Recent developments in rare-earth doped materials for optoelectronics

Kenyon, Anthony J.

doi:10.1016/s0079-6727(02)00014-9

Cited by 826 publications

(483 citation statements)

References 147 publications

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“…The Si-np PL quenching due to defects within the Si-np volume induced by the Nd incorporation may be excluded since the solubility of RE in crystalline or amorphous Si is rather low in comparison with silica. 3 Moreover, Fig. 3 shows that Nd 2 O 3 nanocrystals are formed at a Nd concentration of 4.9 at.% ͑sample D͒.…”

Section: Discussionmentioning

confidence: 94%

“…One of the challenging fields of the last decades concerns silicon compatible light sources and amplifiers which are getting more and more attractive since they can be integrated to microelectronics devices. 3 Unfortunately, whatever the host matrix, RE ions suffer from a low absorption cross-section as it has been reported in the case of Er 3+ ions 4,5 and Nd 3+ ions. 2,6,7 Since the discovery of the sensitizing effect of Si-nanoparticles ͑Si-np͒ toward RE emission, 8 RE-doped nanostructured Si-based films are promising for the achievement of future devices optically excited.…”

Section: Introductionmentioning

confidence: 99%

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Effect of annealing and Nd concentration on the photoluminescence of Nd3+ ions coupled with silicon nanoparticles

Debieu

Bréard

Podhorodecki

et al. 2010

Journal of Applied Physics

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The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd 3+ luminescence in Nddoped silicon-rich silicon oxide Appl. Phys. Lett. 83, 2778Lett. 83, (2003 We report on the microstructure and photoluminescence ͑PL͒ properties of Nd-doped SiO 2 thin films containing silicon nanoparticles ͑Si-np͒ as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess. Fourier transform infrared ͑FTIR͒ spectra show that a phase separation occurs during the annealing due to the agglomeration of the Si excess resulting in the formation of Si-np. Besides, after annealing, the films exhibit PL from excitonic states confined in Si-np. We showed that the intensity of the PL of Nd 3+ ions that occurs at ϳ0.92, 1.06, and 1.4 m is maximal at low Nd concentration and while well-passivated Si-np are formed. FTIR and x-ray measurements showed that the increase in the Nd incorporation has detrimental effects on the PL of Nd 3+ because of the formation of Nd 2 O 3 nanocrystals and inherent disorder in the SiO 2 host matrix. PL excitation measurements demonstrate that the PL of Nd 3+ ions is nonresonant and follows the excitation of Si-np giving new evidence of the energy transfer from Si-np toward the rare earth ions.

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Section: Discussionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Effect of annealing and Nd concentration on the photoluminescence of Nd3+ ions coupled with silicon nanoparticles

Debieu

Bréard

Podhorodecki

et al. 2010

Journal of Applied Physics

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“…1,2 Er 3þ ions also have the capability of upconverting two or more lower energy photons into one high-energy photon. 3 While such upconversion processes represent a loss mechanism for some optoelectronic applications, they are being considered for the enhancement of the energy conversion efficiency of future silicon solar cells.…”

Section: Introductionmentioning

confidence: 99%

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Dingemans

Clark²,

Delft

et al. 2011

Journal of Applied Physics

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Atomic layer deposition was used to deposit amorphous Er-doped Al2O3 films (0.9–6.2 at. % Er) on Si(100). The Er3+ photoluminescence (PL), Er3+ upconversion luminescence, as well as the Si PL and associated surface passivation properties of the films were studied and related to the structural change of the material during annealing. The PL signals from Er3+ and Si were strongly dependent on the annealing temperature (T = 450–1000 °C), but not directly influenced by the transition from an amorphous to a crystalline phase at T > 900 °C. For T > 650 °C, broad Er3+ PL centered at 1.54 μm (4I13/2) with a full width at half maximum of 55 nm was observed under excitation of 532 nm light. The PL signal reached a maximum for Er concentrations in the range of 2–3 at. %. Multiple photon upconversion luminescence was detected at 660 nm (4F9/2), 810 nm (4I9/2), and 980 nm (4I11/2), under excitation of 1480 nm light. The optical activation of Er3+ was related to the removal of quenching impurities, such as OH (3 at. % H present initially) as also indicated by thermal effusion experiments. In contrast to the Er3+ PL signal, the Si luminescence, and consequently the Si surface passivation, decreased for increasing annealing temperatures. This trade-off between surface passivation quality and Er3+ PL can be attributed to an opposite correlation with the decreasing hydrogen content in the films during thermal treatment.

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“…R are earth ions are vital components of many modern technologies including lasers, light emitting diodes and communications [1][2][3][4][5] . The storage of quantum bits is critical to future quantum information technologies.…”

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confidence: 99%

Synthesis of luminescent europium defects in diamond

Magyar

Shanley

et al. 2014

Nat Commun

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Lanthanides are vital components in lighting, imaging technologies and future quantum memory applications owing to their narrow optical transitions and long spin coherence times. Recently, diamond has become a pre-eminent platform for the realisation of many experiments in quantum information science. Here we demonstrate a promising approach to incorporate Eu ions into diamond, providing a means to harness the exceptional characteristics of both lanthanides and diamond in a single material. Polyelectrolytes are used to electrostatically assemble Eu(III) chelate molecules on diamond and subsequently chemical vapour deposition is employed for the diamond growth. Fluorescence measurements show that the Eu atoms retain the characteristic optical signature of Eu(III) upon incorporation into the diamond lattice. Computational modelling supports the experimental findings, corroborating that Eu(III) in diamond is a stable configuration. The formed defects demonstrate the outstanding chemical control over the incorporation of impurities into diamond enabled by the electrostatic assembly together with chemical vapour deposition growth.

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Recent developments in rare-earth doped materials for optoelectronics

Cited by 826 publications

References 147 publications

Effect of annealing and Nd concentration on the photoluminescence of Nd3+ ions coupled with silicon nanoparticles

Effect of annealing and Nd concentration on the photoluminescence of Nd3+ ions coupled with silicon nanoparticles

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Synthesis of luminescent europium defects in diamond

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