Recent developments in the field of transparent conductive oxide films for spectral selective coatings, electronics and photovoltaics

Szyszka, Bernd; Dewald, W.; Gurram, Sanjeev Kumar; Pflug, Andreas; Schulz, Christina; Siemers, Michael; Sittinger, V.; Ulrich, Stephan

doi:10.1016/j.cap.2012.07.022

Cited by 73 publications

(31 citation statements)

References 44 publications

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“…This highly crystalline homogeneous AZO seed layer with perfect (002) orientational order contributes to the improved (002) orientational order of the following AZO ultra-thin film. This kind of AZO ultra-thin film exhibits less defects [18], less grain boundary scattering [14] and excellent (002) orientation [11], contributing towards the improvement of electrical transport. Interestingly, the carrier concentration of the films with oxygen-controlled homoseed layer increased, which was different from the carrier concentration decrease reported in literature [31,32,25].…”

Section: Methodsmentioning

confidence: 98%

“…It has been proven that the hydrogenation of aluminum doped zinc oxide (HAZO) film during sputtering may help to improve the properties at low T s [6][7][8][9]. Nevertheless, as far as polycrystalline ZnObased films are concerned, the electrical property deteriorates rapidly with the decrease of thickness, especially down to 200 nm, which is due to the poor crystalline quality for ultra-thin film [10,11] causing a severe scattering occurring at crystallographic defects [12], ionized impurities, grain barriers, grain boundaries [13,14] and the structural disorder [15,16]. Birkholz et al [16] emphasized that the perfect preferred orientation order of ZnO crystallites, i.e.…”

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confidence: 99%

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Ultra‐thin (002)‐oriented Al‐doped zinc oxide transparent electrode grown on oxygen‐controlled homo‐seed layer

Wang

Yang

Lan

et al. 2013

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Highly (002)‐oriented Al‐doped zinc oxide (AZO) thin films with the thickness of less than 200 nm have been deposited on an oxygen‐controlled homo‐seed layer at 200 °C by DC magnetron sputtering. With the homo‐seed layer being employed, the full‐width at half maximum (FWHM) of the (002) diffraction peak for the AZO ultra‐thin films decreased from 0.33° to 0.22°, and, the corresponding average grain size increased from 26.8 nm to 43.0 nm. The XRD rocking curves revealed that the AZO ultra‐thin film grown on the seed layer deposited in atmosphere of O2/Ar of 0.09 exhibited the most excellent structural order. The AZO ultra‐thin film with homo‐seed layer reached a resistivity of 4.2 × 10–4 Ω cm, carrier concentration of 5.2 × 1020 cm–3 and mobility of 28.8 cm2 V–1 s–1. The average transmittance of the AZO ultra‐thin film with homo‐seed layer reached 85.4% in the range of 380–780 nm including the substrate. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 98%

mentioning

confidence: 99%

Ultra‐thin (002)‐oriented Al‐doped zinc oxide transparent electrode grown on oxygen‐controlled homo‐seed layer

Wang

Yang

Lan

et al. 2013

Physica Rapid Research Ltrs

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“…The layer was deposited with a serial co-sputtering tool that facilitates deposition of component materials with varying composition [22]. In this system niobium is sputtered from a secondary planar target in metallic mode towards a primary rotatable titania target, from where the doped oxide is sputtered onto the substrate in fully oxide mode.…”

Section: Samplementioning

confidence: 99%

Material properties of high-mobility TCOs and application to solar cells

et al. 2014

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The benefit of achieving high electron mobilities in transparent conducting oxides (TCOs) is twofold: they first exhibit superior optical properties, especially in the NIR spectral range, and secondly their low resistivity enables the usage of thinner films. Remarkably high mobilities can be obtained in Al-doped zinc oxide by post-deposition annealing under a protective layer. The procedure has not only shown to increase mobility, but also strongly reduces sub-bandgap absorption.Extensive optical, electrical and structural characterization is carried out in the films in order to clarify the microscopic origins of the changes in material properties. While the annealing of defect states, most likely deep acceptors, seems clear, earlier results also suggest some influence of grain boundaries. Tailing, on the contrary, seems to be linked to extended defects.In application to a-Si:H/µc-Si:H thin film solar cells the films have already shown to increase spectral response. When reducing the film thickness, the main challenge is to provide a suitable light trapping scheme. Normally this is achieved by a wet chemical etching step in diluted HCl, which provides a surface structure with suitable light scattering properties. Therefore a TCO-independent light scattering approach using textures glass was applied in conjunction with the high mobility zinc oxide. The substrate enables the use of very thin TCO layers with a strongly reduced parasitic absorption.

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“…TCO is widely used in display, photovoltaic, architectural and smart window glass, etc. [1][2][3]. The most commonly used TCO material now is ITO, which contains the expensive rare metal indium.…”

Section: Introductionmentioning

confidence: 99%