2017
DOI: 10.1117/12.2247988
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Recent improvement in nitride lasers

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Cited by 40 publications
(30 citation statements)
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“…Watt‐level blue and green LDs reported to date have been fabricated on conventional c‐plane GaN substrates . In general, c‐plane GaN has strong piezoelectric fields inside InGaN quantum wells with a high indium concentration.…”
Section: Polar and Semipolar Gan Substratesmentioning
confidence: 99%
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“…Watt‐level blue and green LDs reported to date have been fabricated on conventional c‐plane GaN substrates . In general, c‐plane GaN has strong piezoelectric fields inside InGaN quantum wells with a high indium concentration.…”
Section: Polar and Semipolar Gan Substratesmentioning
confidence: 99%
“…These piezoelectric fields degrade the luminous efficiency through reduction of the recombination probability, so it has been difficult to fabricate green or longer‐wavelength light‐emitting devices on c‐plane GaN substrates. Although watt‐level output operation of green lasers at wavelengths of around 520 nm has been reported, their output powers and wall‐plug efficiencies decrease dramatically above 530 nm, the required wavelength to meet Rec. BT.2020 .…”
Section: Polar and Semipolar Gan Substratesmentioning
confidence: 99%
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