Recent progress and current issues in SiC semiconductor devices for power applications

Johnson, C.M.; Wright, N. G.; Uren, Michael J.; Hilton, K.P.; Rahimo, Munaf; Hinchley, D.A.; Knights, A. P.; Morrison, D.J.; Horsfall, Alton B.; Ortolland, S.; O'Neill, AG

doi:10.1049/ip-cds:20010166

Cited by 29 publications

(5 citation statements)

References 33 publications

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“…Silicon carbide (SiC) is a IV-IV binary compound semiconductor with strong chemical bonds between silicon and carbon atoms. As a result, SiC is a chemically inert material of high hardness and high thermal conductivity with a wide bandgap energy (ranging from 2.39 eV for 3C-SiC to 3.02 eV for 6H-SiC to 3.26 eV for 4H-SiC crystals) and high breakdown electric field, suitable to be used in high-power or highfrequency applications and high-radiation environments [1][2][3][4][5][6]. Although Si is still the most commonly used semiconductor for power devices today, based on technology developed in recent decades it is likely to be outperformed by SiC due to its superior physical and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

“…Also the characteristics of SiC to easily form many different crystal structures with different stacking sequence along a particular crystallographic direction, called polytypism (see [4] for a good introduction into the subject), has also been an obstacle to grow electronicgrade single crystals. While more than 200 different SiC polytypes are known, the polytype that is of major interest for applications is hexagonal 4H, while hexagonal 6H and cubic 3C are to lesser extent also used [2,3,5,6]. 3C-SiC represents a pure cubic structure, whereas 4H-and 6H-SiC are formed by alternating hexagonally and cubically coordinated Si-C bilayers.…”

Section: Introductionmentioning

confidence: 99%

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Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC

Costa¹,

Wahl²,

Correia³

et al. 2017

Semicond. Sci. Technol.

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Using radioactive isotopes produced at the CERN-ISOLDE facility, the lattice location of the implanted transition metal (TM) ions 56 Mn, 59 Fe and 65 Ni in n-type single-crystalline hexagonal 6H-SiC was studied by means of the emission channeling technique. TM probes on carbon coordinated tetrahedral interstitial sites (T C) and on substitutional silicon sites (S Si,h+k) were identified. We tested for but found no indication that the TM distribution on S Si sites deviates from the statistical mixture of 1/3 hexagonal and 2/3 cubic sites present in the 6H crystal. The TM atoms partially disappear from T C positions during annealing at temperatures between 500 °C and 700 °C which is accompanied by an increase on S Si and random sites. From the temperature associated with these site changes, interstitial migration energies of 1.7-2.7 eV for Mn and Ni, and 2.3-3.2 eV for Fe were estimated. TM lattice locations are compared to previous results obtained in 3C-SiC using the same technique.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC

Costa¹,

Wahl²,

Correia³

et al. 2017

Semicond. Sci. Technol.

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“…SiC, a wide bandgap semiconductor, is an ideal candidate for power-switching devices as it has an avalanche breakdown field about five times larger than that of silicon. [1][2][3] The wide bandgap of SiC also makes high-temperature operation possible and the high electron saturation velocity of SiC enables fast switching of SiC based transistors. [4][5][6][7][8][9] SiC has been recently employed in sensors and power device technologies.…”

Section: Introductionmentioning

confidence: 99%

Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications

Elgabra¹,

Siddiqui²,

Singh³

2016

Jpn. J. Appl. Phys.

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Silicon carbide (SiC) is a wide bandgap semiconductor that is inherently capable of operation in unforgiving environments such as high temperatures and radiation. Currently, the control circuitry for SiC based power devices and sensors are silicon based, limiting the overall efficiency of the system in such environments. 4H-SiC integrated circuits, based on different conventional logic technologies, have been investigated in the past using different device structures, by various research groups. This paper presents a thorough investigation of conventional bipolar logic technologies in 4H-SiC simulated across a wide range of temperatures (300–773 K) and power supply voltages (7–17 V). Unlike previous studies, this paper evaluates different technologies using the same device structure in the simulation, to highlight the true merits of each logic technology. The stable performance of all the studied logic technologies in SiC validates the potential of 4H-SiC ICs in small scale logic applications.

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“…The development of SiC technology over the last decade has been directed significantly towards the area of power electronic device applications [3]. The 4H polytype with a bandgap of 3.26 eV is the most commonly studied, due to its overall superior material properties.…”

Section: Introductionmentioning

confidence: 99%

Role of oxygen in high temperature hydrogen sulfide detection using MISiC sensors

Weng

Mahapatra

Wright

et al. 2008

Meas. Sci. Technol.

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This paper reports on the sensitivity of a MISiC capacitor sensor with a catalytic top contact to gas mixtures, including hydrogen sulfide, at temperatures in excess of 300 °C. The gas concentration may be extracted from the change in leakage current through the capacitor and exposure to H2S gives a response similar to that observed in hydrogen. This indicates that the decomposition of the H2S on the catalytic contact is forming atomic hydrogen, which forms a dipole layer at the dielectric/SiO2 interface. Exposure to oxygen and H2S simultaneously gives a larger hydrogen-like response, which is contrary to that observed when hydrogen and oxygen are mixed. We suggest that this response is related to the influence of the choice of dielectric used to fabricate the capacitor structure, offering the opportunity to develop array technology for unique identification of gas species in a mixture.

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Recent progress and current issues in SiC semiconductor devices for power applications

Cited by 29 publications

References 33 publications

Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC

Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC

Simulation of conventional bipolar logic technologies in 4H-SiC for harsh environment applications

Role of oxygen in high temperature hydrogen sulfide detection using MISiC sensors

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