Recent progress in 1×x-ray mask technology: Feasibility study using ASET-NIST format TaXN x-ray masks with 100 nm rule 4 Gbit dynamic random access memory test patterns

Tsuboi, Shinji; Tanaka, Yuusuke; Iwamoto, Toshiyuki; Sumitani, Hiroaki; Nakayama, Yoshinori

doi:10.1116/1.1408952

Cited by 8 publications

(1 citation statement)

References 35 publications

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“…The EB-X3 attained the image placement of less than 10 nm (3) and the critical dimension controllability of less than 7 nm (3) in the mask pattern writing. 2,3) Moreover, the specifications of X-ray mask required for the 100 nm node were achieved by modifying the mask absorber material. 4,5) As for the printing accuracy, the CD controllability of better than 10 nm (3) and the alignment accuracy within 20 nm (3) are achieved at the gap of 10 m, and the overlay accuracies of less than 30 nm (3) are achieved between gate and contact layers, which satisfy the specifications required at the 100 nm node.…”

Section: Introductionmentioning

confidence: 99%

50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography

Watanabe

Marumoto

Sumitani

et al. 2002

Jpn. J. Appl. Phys.

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This paper describes one aspect of advanced proximity X-ray lithography, called second generation proximity X-ray lithography (PXL-II). The spectra absorbed in the resists containing special elements (e.g., Cl, S, P, Si and Br), which have an absorption edge within the exposure spectrum, become narrowband as compared with those in the conventional resist. In this paper, we investigated narrowband spectrum effects on resolution enhancement by using an optical image simulator and by carrying out some exposure experiments. As a result, it was found that the combination of a narrowband spectrum and the simple mask pattern bias is effective to enhance the resolution. In actual exposure experiments, the 50 nm line-and-space (L&S) patterns were formed at the wide gap of 10 m by using a narrowband spectrum and mask pattern with biases of more than 20 nm. Moreover, by using the narrowband spectrum absorbed in the resist with Br content of 40 wt%, we indicated that the power absorbed in the resist is several times greater than that absorbed in the conventional resist.

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Section: Introductionmentioning

confidence: 99%

50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography

Watanabe

Marumoto

Sumitani

et al. 2002

Jpn. J. Appl. Phys.

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Fabrication of Nanoarchitectures Using Lithographic Techniques

Self-Assembled Nanostructures

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Suppression of secondary electron blur by using Br-containing resists in x-ray lithography

Kise

Marumoto

Watanabe

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Second generation proximity x-ray lithography (PXL-II), which uses shorter incident x-ray wavelengths and resist materials, is expected to be a candidate for next generation lithography. In the PXL-II technique, the x-ray wavelength absorbed in the resist becomes shorter, but degradation of the pattern quality due to secondary electron blur has not been sufficiently evaluated. In this article, we present our investigation of the secondary electron blur’s suppression in Br-containing resist using a lithographic simulator and a Monte Carlo simulator for electron scattering. By introducing the Br element into resist materials, the electron stopping power improves. In addition, secondary electron blur is suppressed in regions with wavelengths shorter than that of the Br absorption edge. In order to evaluate pattern resolution, the image contrast of the lateral absorbed image in the resist is defined. We found that image contrast is improved in Br-containing resist for the wavelength range down to about 4.5 Å, which is suitable for PXL-II. We also show that it should be possible to extend PXL-II for resolutions of less than 40 nm at a narrower gap.

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Recent progress in 1×x-ray mask technology: Feasibility study using ASET-NIST format TaXN x-ray masks with 100 nm rule 4 Gbit dynamic random access memory test patterns

Abstract: Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications

Cited by 8 publications

References 35 publications

50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography

50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography

Fabrication of Nanoarchitectures Using Lithographic Techniques

Suppression of secondary electron blur by using Br-containing resists in x-ray lithography

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