Recent progress in ferroelectric synapses and their applications

Yan, Shaoan; Zang, Junyi; Xu, Peng; Zhu, Yingfang; Li, Gang; Chen, Qilai; Chen, Zhuojun; Zhang, Yan; Tang, Minghua; Zheng, Xuejun

doi:10.1007/s40843-022-2318-9

Cited by 24 publications

(8 citation statements)

References 119 publications

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“…Ferroelectric thin film materialis also a promising candidate dielectric layer for the neuromorphic OFET device because of its distinctive ferroelectric associated resistive switching effect and nonvolatile polarization [80][81][82][83][84][85]. Meanwhile, the unique polarization plasticity of ferroelectric material is similar to the brain-like synaptic function, and Poly(vinylidene fluoride) (PVDF) is the most used ferroelectric material in OFET devices, which possess excellent ferroelectricity and thermal stability and is suitable for neuromorphic OFET device [86].…”

Section: Ferroelectric Neuromorphic Ofet Devicementioning

confidence: 99%

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

Liu,

Lian,

Chen

et al. 2024

Int. J. Extrem. Manuf.

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The development of various artificial electronics and machines would explosive increase the information and data, which need to be processed in-situ remediation. Bioinspired synapse devices can store and process signals in a parallel way, then improve fault tolerance and decrease the power consumption of artificial systems. The organic field effect transistor (OFET) is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices. In this review, the organic semiconductor materials, structures and fabrication, and different artificial sensory perception systems functions based on micro-sized neuromorphic OFET devices are summarized. Finally, a summary and challenges of neuromorphic OFET devices are provided. This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems, which would provide a reference for the achievement of neuromorphic systems in future bioinspired electronics.

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Section: Ferroelectric Neuromorphic Ofet Devicementioning

confidence: 99%

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

Liu,

Lian,

Chen

et al. 2024

Int. J. Extrem. Manuf.

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“…Ferroelectric materials are a group of crystals with low symmetry and are subject to spontaneous polarization over a range of temperatures [122]. Such polarization orientation is reversible under an external electric field, enabling modulation of the threshold voltage and conductance in FeFET.…”

Section: Ferroelectric-gated Field-effect Transistor (Fefet)mentioning

confidence: 99%

2D multifunctional devices: from material preparation to device fabrication and neuromorphic applications

Huang,

Li,

Zhang

et al. 2024

Int. J. Extrem. Manuf.

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Neuromorphic computing systems, which mimic the operation of neurons and synapses in the human brain, are seen as an appealing next-generation computing method due to their strong and efficient computing abilities. Two-dimensional (2D) materials with dangling bond-free surfaces and atomic-level thicknesses have emerged as promising candidates for neuromorphic computing hardware. As a result, 2D neuromorphic devices may provide an ideal platform for developing multifunctional neuromorphic applications. Here, we review the recent neuromorphic devices based on 2D material and their multifunctional applications. The synthesis and next micro-nano fabrication methods of 2D materials and their heterostructures are first introduced. The recent advances of neuromorphic 2D devices are discussed in details using different operating principles. More importantly, we present a review of emerging multifunctional neuromorphic applications, including neuromorphic visual, auditory, tactile, and nociceptive systems based on 2D devices. In the end, we discuss the problems and methods for 2D neuromorphic device developments in the future. This paper will give insights into designing 2D neuromorphic devices and applying them to the future neuromorphic systems.

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“…DNNs need analog conductance modulation, while SNNs require conduction controlled by temporal correlations between signals; thus, an artificial synapse with diverse plasticity is necessary for diverse neural networks. , Ferroelectric thin films have attracted much attention for artificial synapses due to nonvolatility, easy controllability, high stability, and fast speed since their resistive switching comes from a pure electronic mechanism . Recently, ferroelectric synaptic devices have made important progress in functional simulation of biological synapses, such as paired-pulse facilitation (PPF), spike timing-dependent plasticity (STDP), spike rate-dependent plasticity (SRDP), and Bienenstock–Cooper–Munro (BCM) learning rules, and some with sub-nanosecond speed, linear weight update, and high precision. , However, versatile synaptic plasticity is still limited in a single ferroelectric device.…”

Section: Introductionmentioning

confidence: 99%

“…6 Recently, ferroelectric synaptic devices have made important progress in functional simulation of biological synapses, such as paired-pulse facilitation (PPF), spike timing-dependent plasticity (STDP), spike rate-dependent plasticity (SRDP), and Bienenstock− Cooper−Munro (BCM) learning rules, and some with subnanosecond speed, linear weight update, and high precision. 7,8 However, versatile synaptic plasticity is still limited in a single ferroelectric device.…”

Section: Introductionmentioning

confidence: 99%

Synapse with Diverse Plasticity in Ferroelectric BaTiO₃ Thin Films for Neuromorphic Computing

Yi,

Duan,

et al. 2024

J. Phys. Chem. C

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Synapse-based artificial neural networks (ANNs) are hopeful in overcoming the von Neumann bottleneck since they can process and store data simultaneously. Here, we present an artificial synaptic device based on a ferroelectric BaTiO 3 thin film with a robust weight update and diverse plasticity for ANNs. Specifically, the potentiation and depression effects strongly depend on the spike polarity, amplitude, number, and rate. Moreover, four types of spike timing-dependent plasticities (STDP) and two types of Bienenstock−Cooper−Munro (BCM) learning rules with sliding frequency thresholds are obtained. For BCM learning rules, a normal one with potentiation at a high frequency and depression at a low frequency is obtained under a positive bias and an abnormal one with depression at a high frequency and potentiation at a low frequency is achieved at a negative bias. Furthermore, an ANN is enabled with a recognition accuracy of 92.18%. These results are essential for potential applications of ferroelectric artificial synapses for ANNs.

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Recent progress in ferroelectric synapses and their applications

Cited by 24 publications

References 119 publications

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

2D multifunctional devices: from material preparation to device fabrication and neuromorphic applications

Synapse with Diverse Plasticity in Ferroelectric BaTiO₃ Thin Films for Neuromorphic Computing

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Recent progress in ferroelectric synapses and their applications

Cited by 24 publications

References 119 publications

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

2D multifunctional devices: from material preparation to device fabrication and neuromorphic applications

Synapse with Diverse Plasticity in Ferroelectric BaTiO3 Thin Films for Neuromorphic Computing

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Product

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Synapse with Diverse Plasticity in Ferroelectric BaTiO₃ Thin Films for Neuromorphic Computing