Recent progress in thallium bromide detectors for X- and γ-ray spectroscopy

Hitomi, Keitaro; Muroi, O.; Matsumoto, Mariko; Hirabuki, R.; Shoji, Tadayoshi; Suehiro, T.; Hiratate, Y.

doi:10.1016/s0168-9002(00)00883-4

Cited by 52 publications

(34 citation statements)

References 12 publications

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“…Detectors fabricated from wide band-gap semiconductor materials possess the properties necessary for high detection efficiency and energy resolution; in addition, they can also operate at room temperature without the need for cryogenic cooling (Schlesinger and James, 1995). Over the years a number of compound semiconductors such as cadmium zinc telluride (CdZnTe) (McGregor and Hermon, 1997), cadmium telluride (CdTe) (Shoji et al, 1992), and thallium bromide (TlBr) (Hitomi et al, 2001) have been investigated and successfully applied for room temperature radiation detection.…”

Section: Introductionmentioning

confidence: 99%

Growth, fabrication, and testing of bismuth tri-iodide semiconductor radiation detectors

Gokhale

Han

Baciak

et al. 2015

Radiation Measurements

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Section: Introductionmentioning

confidence: 99%

Growth, fabrication, and testing of bismuth tri-iodide semiconductor radiation detectors

Gokhale

Han

Baciak

et al. 2015

Radiation Measurements

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“…TlBr has a CsCl-type simple cubic crystal structure [4] and it is non-hygroscopics [3]. The low melting point (480ºC) and unique solid phase of TlBr are advantageous for melt purification and crystal growth [5].…”

Section: Introductionmentioning

confidence: 99%

Purification and crystal growth of TlBr for application as a radiation detector

Oliveira¹,

Chubaci²,

Armelin

et al. 2004

Cryst. Res. Technol.

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Thallium bromide is a semiconductor compound with high atomic number and density. It has a CsCl-type simple cubic crystal structure and it is non-hygroscopics. The TlBr crystals are relatively soft with a knoop hardness number of 12. In this work, the TlBr commercial powder was purified by zone refining and the purest material section was used for crystal growth by Bridgman method. Efforts have been concentrated on the purification of the TlBr. The purification efficiency has been evaluated (NAA and ICP-MS) by impurities reduction results after zone refining passes. The crystalline quality was evaluated by X-ray diffraction. The characterized TlBr crystal as a detector has shown good response to gamma radiation.

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“…As shown by X-ray photoelectron spectroscopy of etched surfaces of pure TlBr, the only contaminants in small amounts are carbon and oxygen [5], which are commonly observed foreign elements on solid surfaces.…”

Section: B Amentioning

confidence: 99%

Surface Processing of TlBr Crystals for X- and γ-ray Detectors

Shorohov¹,

Muktepavela²,

Maniks³

2008

Latvian Journal of Physics and Technical Sciences

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A procedure for surface processing of TlBr crystals to be applied as X-and γ-ray detectors has been developed, providing removal of a mechanically destroyed surface layer by deep chemical etching, allowing the surfaces of good topography and thus the detectors with high energy resolution and stability to be obtained in a repeatable way. The surface quality and structural changes in the near-surface layer are estimated by the optical microscopy and indentation hardness technique.

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Recent progress in thallium bromide detectors for X- and γ-ray spectroscopy

Cited by 52 publications

References 12 publications

Growth, fabrication, and testing of bismuth tri-iodide semiconductor radiation detectors

Growth, fabrication, and testing of bismuth tri-iodide semiconductor radiation detectors

Purification and crystal growth of TlBr for application as a radiation detector

Surface Processing of TlBr Crystals for X- and γ-ray Detectors

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