Recent progress in the phase-field dislocation dynamics method

Xu, Shuozhi

doi:10.1016/j.commatsci.2022.111419

Cited by 8 publications

(2 citation statements)

References 60 publications

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“…The order parameter for a given slip system α, denoted by ϕ α , is 0 for the unslipped state and 1 or more for the slipped state. The total system energy consists of energetic terms that are a function of the evolving order parameters [13]. For a multi-phase material, a second quantity, a virtual strain tensor ϵ v independent of ϕ, is introduced and included in the solution [11].…”

Section: Pfdd Formulationmentioning

confidence: 99%

Thick interface size effect on dislocation transmission in nanolaminates

Cheng

Mara

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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Recent experimental studies have reported that thick interfaces in nanolaminates can lead to greater strengths than conventionally sharp interfaces without sacrificing deformability. Using a multi-phase phase-field dislocation dynamics model, dislocation transmission across a compositionally graded, nanoscale thick interface is investigated. Thicker interfaces over a finite range are found to lead to greater resistance to transmission. The limit interface thickness at which the peak resistance is reached, and the strengthening capacity of the interface are greater when the dislocation is dissociated, as in a face-centered cubic lattice, than when it is compact, as in a body-centered cubic lattice. The composition transitions within the interface are treated with multiple sublayers, and it is found that the interface transmission barrier is as strong as its most resistance composition.

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Section: Pfdd Formulationmentioning

confidence: 99%

Thick interface size effect on dislocation transmission in nanolaminates

Cheng

Mara

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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“…Due to the multiple-origin nature of defect generation and complex interactions in defect expansion, the dynamic process that forms the observed random pattern of the morphology and the characteristics indicated by these patterns were not fully understood. A variety of defect simulation models exist, including first-principle physics-based atomic models [19], [20], molecular dynamic models [21], [22], and discrete dislocation models [23], [24]. However, the outcome results from these models have limited time and space scales, not to mention that the simulation requires expensive computation resources, making the existing methods unsuitable for macroscopic-scale simulation of VCSEL structures with heterogeneous materials and complex geometry.…”

Section: Introductionmentioning

confidence: 99%

Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs

Zhang,

Li,

Zhao

2024

IEEE Photonics J.

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Many failures of semiconductor-based oxide confined vertical cavity surface emitting lasers (VCSELs) are closely related to the generation and expansion of defects in the device structure. However, existing research has predominantly focused on the static study of defect morphology, with little attention given to analyzing the dynamic process of defect expansion, which limited our ability to predict device random failures due to lack of understandings on defect generation and expansion. To address this issue, we present a macroscopic phenomenological evolution model that describes the dynamic expansion of defects in VCSELs, in which the expansion of defects is treated as an anisotropic lattice strain diffusion process. We further exploit a diffusion-limited aggregation (DLA) method in solving the diffusion equation, which describes the random propagation and aggregation of strain in the vicinity of highly strained areas, resulting in defect formation when the stress from accumulated strain surpasses the bonding force of the atoms in the lattice. Our simulation result manages to replicate the dendritic expansion morphology of defects, aligning with experimental observations very well. Our model also predicts an accelerated defect expansion process, which is again consistent with the experimental result. This model finds relevance in applications such as random failure prediction through device aging, burn-in condition setting in device screening, and device structural and/or material design improvement for mitigating defect expansion.

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Deformation mechanisms and defect structures in Heusler intermetallic MnCu2Al

Rhodes,

Mayer,

et al. 2024

Acta Materialia

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Recent progress in the phase-field dislocation dynamics method

Cited by 8 publications

References 60 publications

Thick interface size effect on dislocation transmission in nanolaminates

Thick interface size effect on dislocation transmission in nanolaminates

Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs

Deformation mechanisms and defect structures in Heusler intermetallic MnCu2Al

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