Recent progress of Ga2O3-based gas sensors

Growth and Characterization of Sputtered ZnO:ZnGa2O4 Dual-Phase Films on Sapphire Substrates for NO Gas-Sensing Applications

“…However, the response and recovery times of this NO gas sensor under a N 2 atmosphere were estimated to be 8.2 and 5.6 min, which were higher than those estimated in our work . Since the NO x gas sensors made from certain oxide materials (SnO 2 , ZnO, WO 3 , and In 2 O 3 ) cannot operate above 400 °C, the use of long-term stable Ga 2 O 3 - and ZnGa 2 O 4 -based gas sensors for detecting NO x gases is advantageous . In order to shed the light on various sensors and sensing characteristics of the aforementioned materials, the readers are advised to go through some amazing articles, which broadly discuss the recent advances in gas sensors, sensing performances, sensing mechanism, and influencing factors. − Recently, ZnGa 2 O 4 has been widely applied as an active sensing material in gas sensors to ensure rapid detection because of their wide detection range, low power consumption, easy fabrication, high stability, and reproducibility at low detection costs. , In addition to this, ZnGa 2 O 4 has potential applications in gas sensors, deep-ultraviolet photodetectors, transistors, − phosphors, and so on , due to its catalytic activity and high chemical and thermal stability under a harsh environment.…”

“…25 Since the NO x gas sensors made from certain oxide materials (SnO 2 , ZnO, WO 3 , and In Ga 2 O 3 -and ZnGa 2 O 4 -based gas sensors for detecting NO x gases is advantageous. 26 In order to shed the light on various sensors and sensing characteristics of the aforementioned materials, the readers are advised to go through some amazing articles, which broadly discuss the recent advances in gas sensors, sensing performances, sensing mechanism, and influencing factors. 27−32 Recently, ZnGa 2 O 4 has been widely applied as an active sensing material in gas sensors to ensure rapid detection because of their wide detection range, low power consumption, easy fabrication, high stability, and reproducibility at low detection costs.…”

P-type nitrogen-doped β-Ga2O3: the role of stable shallow acceptor NO–VGa complexes

“…Ultrawide-bandgap oxide semiconductor Ga 2 O 3 has attracted intense attention due to its potential applications in power devices, 1–3 solar-blind photodetectors, 4–7 and high-temperature gas sensors. 8,9 While great efforts have been made to obtain high-quality Ga 2 O 3 of bipolar doping, p-type doping is still very difficult to achieve, which has become a great obstacle to fabricating high-performance devices with good stability and convenience. The challenge comes from the large formation energy and ionization energy of isolated defects, low hole activation efficiency, strong hole self-trapping effect, self-compensation effects of cation and oxygen vacancies, and low hole mobility in p-type doped Ga 2 O 3 materials.…”

Anomalous Temperature-Dependent Phonon Anharmonicity and Strain Engineering of Thermal Conductivity in β-Ga2O3

“…β-Ga 2 O 3 with an ultrawide band gap of 4.9 eV has a broad application prospect in gas detection, photoelectric detection, and power electronics. − However, the realization of β-Ga 2 O 3 -based high-performance devices is faced with two obstacles, including the lack of p-type β-Ga 2 O 3 materials and the low lattice thermal conductivity κ of β-Ga 2 O 3 . − For instance, low κ may induce a serious self-heating effect, leading to an increase in channel temperature, a decrease in electron mobility, and a significant decrease in the cutoff frequency as the output power increases, which seriously hinder the application of β-Ga 2 O 3 in power electronics. Therefore, the pulse signal operation in the field-plated β-Ga 2 O 3 metal oxide semiconductor field-effect transistor (MOSFET) and the integration of high-κ materials including diamond and sapphire as substrates or heat transducers are proposed to enhance the heat dissipation rate of the β-Ga 2 O 3 -based devices. − …”