Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

Zhang, Cheng; Li, Yang; Ma, Chunlan; Zhang, Qichun

doi:10.1002/smsc.202100086

Cited by 102 publications

(74 citation statements)

References 115 publications

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“…Organic semiconductor‐based memristive devices, denoted as OSMs, have been considered to be a promising device concept for next‐generation memory & data‐storage technology. [ 1‐3 ] Recent years have been discovering a variety of organic semiconductor materials for the application of OSMs, including organic small molecules, polymers, organic‐inorganic hybrid materials, and multi‐component materials. [ 4‐6 ] Among these, organic small molecules display outstanding characteristics of easy fabrication, tailored geometric construction, simple purification, and so on, which have gained increasing interest over the past years.…”

Section: Background and Originality Contentmentioning

confidence: 99%

Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex^†

et al. 2022

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Comprehensive Summary In the information‐explosion era, developing novel algorithms and memristive devices has become a promising concept for next‐generation capacity enlargement technology. Organic small molecule‐based devices displaying superior learning‐memory performance have attracted much attention, except for the existence of poor heat‐resilience and mediocre conductivity. In this paper, a strategy of transforming an organic‐type data‐storage material to metal complex is proposed to resolve these intrinsic issues. A pristine NDI‐derivative (NIPy) and its corresponding Co(II) complex (CoNIPy) are synthesized for the purpose of electrical property investigation. CoNIPy complex‐based memristive device exhibits superior ternary WORM memory performance compared with the binary behavior of NIPy, including >104 s of reading, lower threshold voltage (Vth), 1: 102: 105 of OFF/ON1/ON2 current ratio, and long‐term stability in heating environment. The variable learning‐memory behavior can be attributed to the enhanced ligand‐to‐metal charge transfer (LMCT) and improved redox activity after the introduction of central metal atom and coordination bond. These studies on material innovation and optimal performance are of great importance not only for environmentally‐robust memristive devices but also for practical application of a host of organic electronic devices.

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Section: Background and Originality Contentmentioning

confidence: 99%

Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex^†

et al. 2022

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“…In order to obtain steady-quality inorganic bismuth-based perovskite films such as CsBi 3 I 10 and CsBi 2 I 9 , [30][31][32][33] researchers have begun using organic anti-solvent [34,35] such as chloroform and ethyl-acetate which are toxic to acetate-assisted…”

Section: Doi: 101002/admi202200237mentioning

confidence: 99%

Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi₂I₇/ITO Structure

Yang

Zhong

Wang

et al. 2022

Adv Materials Inter

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The cross‐compatibility of electronic devices and biomedicine has greatly promoted the new medical diagnosis and treatment technology. Developing biodegradable resistive random access memory device (ReRAM) with low power is key to biomedical application. In this paper, the all‐inorganic air‐stable and high‐quality AgBi2I7 perovskite‐like film is successfully prepared by introducing Ag+ into the Bi‐I system. The device has a higher ON/OFF ratio after annealing in NH3 compared with annealing in vacuum, and the switching behavior changes from gradual type to abrupt filamentary type. Meanwhile, ultralow power characteristic with the set power of 6.9 × 10–7 W (0.42V@1.6 × 10–6A) and the reset power of 1.5 × 10–8 W (1V@1.5 × 10–8A) is achieved in the Ag/AgBi2I7/ITO memory devices after annealing in NH3. Good biodegradability is affirmed via put Ag/AgBi2I7/ITO device in PBS solution. Results show that the Ag/AgBi2I7/ITO memory devices are the promising candidate in the field of biomedical application.

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“…DOI: 10.1002/smll.202202637 of 10 12 bit cm −2 . [1][2][3][4][5][6] To address this shortfall, efforts aimed at increasing the data storage densities of organic devices have focused on two aspects, namely downscaling the cell size from the micrometer to nanometer scale, [7][8][9][10][11][12] and the development of multi-level data storage devices where the storage density is able to be increased by 2 n to 3 n or 4 n , etc. [13][14][15][16][17][18] The methods available for downscaling the memory size can be categorized into top-down and bottom-up approaches.…”

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Nanomicelles Array for Ultrahigh‐Density Data Storage

Wang

Zhang

et al. 2022

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High‐density data storage devices based on organic and polymer materials are currently restricted by two key issues, size limitations and uniformity of memory cells. Herein, one triblock polymer is synthesized by ring‐opening metathesis polymerization, where the polymer contains an electron‐donor‐acceptor (A1D) segment, an electron‐acceptor (A2) segment, and a hydrophilic segment, that shows ternary memory behavior in a conventional sandwich‐type device. The polymers that have monodisperse molecular weight dispersity self‐assemble into nanomicelles with a uniform size of 80 nm. Each nanomicelle is composed of an A1DA2‐type hydrophobic core stabilized with a hydrophilic shell. Nanobowls based on conductive oxide are prepared via the template method, wherein the nanomicelles are present as independent nanoscale memory units to produce an array of micelle matrices. Investigations of the resulting nanomemory device using conductive atomic force microscopy show that the micelles exhibit a predominant semiconductor memory behavior. Compared to traditional ternary devices with a memory unit size of ≈1 mm, this innovative fabrication method based on arrayed uniform nanomicelles downscales the size of storage cells to 80 nm. Furthermore, the described system leads to a greatly enhanced storage density (>108 times over the same area), which opens up new paths for further development of ultrahigh‐density data storage devices.

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Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

Cited by 102 publications

References 115 publications

Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex^†

Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex^†

Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi₂I₇/ITO Structure

Nanomicelles Array for Ultrahigh‐Density Data Storage

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Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

Cited by 102 publications

References 115 publications

Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex†

Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex†

Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi2I7/ITO Structure

Nanomicelles Array for Ultrahigh‐Density Data Storage

Contact Info

Product

Resources

About

Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex^†

Variable Learning‐Memory Behavior from π‐Conjugated Ligand to Ligand‐Containing Cobalt(II) Complex^†

Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi₂I₇/ITO Structure