Recent Progress on 1.55-$\mu{\hbox {m}}$ Dilute-Nitride Lasers

Bank, Seth R.; Bae, Hae-Rahn; Goddard, Lynford L.; Yuen, H. B.; Wistey, Mark A.; Kudrawiec, R.; Harris, James S.

doi:10.1109/jqe.2007.902301

Cited by 91 publications

(64 citation statements)

References 84 publications

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“…[1][2][3] In particular, the presence of a small amount of nitrogen in the In x Ga 1−x As alloy causes a dramatic redshift of the host material band gap and an increased insensitivity of the band gap energy to temperature T. 4 However, fabrication of high-quality Ga 1−x In x N y As 1−ybased 1.55-μm devices remains a difficult task due to a large miscibility gap, which in turn results in an increased tendency for phase separation and strong carrier localization. 5,6 In the present work we use magneto-photoluminescence (magneto-PL) to study carrier localization in two contrasting samples: one grown at an elevated temperature and without lattice matching between the QWs and the barrier material, and one with optimized growth temperature and sample morphology. We build up a consistent phenomenological picture of the localization of electrons and holes in these two samples.…”

Section: Introductionmentioning

confidence: 99%

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

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We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga 1−x In x N y As 1−y multiple quantum well structures in magnetic fields up to 50 T as a function of temperature and excitation power. The observation of a nonmonotonic dependence of the PL energy on temperature indicates that localized states dominate the luminescence at low temperature, while magneto-PL experiments give new insights into the nature of the localization. We find that the low-temperature spatial distribution of carriers in the quantum well is different for electrons and holes because they are captured by different disorder-induced complexes that are spatially separated. A study of the thermalization of the carriers toward free states leads to the determination of the free-exciton wave-function extent in these systems and enables an assessment of the localization potentials induced by inhomogeneity in the quantum well.

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Section: Introductionmentioning

confidence: 99%

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

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“…The GaInNAsSb wafer was grown by molecular beam epitaxy (MBE) and comprised a single 7nm GaInNAsSb (41% In, 3.3%N, 3% Sb) well with 20nm GaNAs barriers either side; the waveguide core is 440 nm thick and Al 0.33 Ga 0.67 As provides the waveguide cladding [3]. After growth the structure was annealed at 680°C for 10 mins in a rapid thermal annealer using a GaAs proximity cap.…”

Section: Methodsmentioning

confidence: 99%

“…The addition of Sb has enabled the emission wavelength of this system to be extended to the 1.5 μm region [2], [3]. Further refinements have included the use of GaNAs barriers to compensate the large amount of strain in the wells [4].…”

Section: Introductionmentioning

confidence: 99%

“…Further refinements have included the use of GaNAs barriers to compensate the large amount of strain in the wells [4]. With these developments it has been possible to produce devices with threshold current densities of 200 A cm −2 at 1.3 μm [5] and as low as 373 Acm −2 for a 3 mm long device at 1.55 μm [3] respectively. Through the interaction of the N defect level with the conduction band dispersion curve of the host material the band structure is modified by the addition of nitrogen to GaInAs, bringing about changes in effective mass, matrix element and density of states [6].…”

Section: Introductionmentioning

confidence: 99%

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Optical Gain in GaInNAs and GaInNAsSb Quantum Wells

Ferguson

Blood

Smowton

et al. 2011

IEEE J. Quantum Electron.

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Abstract-We have measured the absorption, gain and spontaneous emission spectra of GaInNAsSb (3.3%N), GaInNAs (0.5%N) and GaInAs quantum well structures to compare their merits as laser gain media. The parameters describing the relations between peak gain and current provide only limited insight. From the analysis of absorption spectra we have determined the intrinsic properties of the structures, represented by the product [reduced density of states × matrix element × overlap integral], taking account of differences in operating wavelength, well width and confinement. We find only a small variation in this product across the samples. The GaInNAsSb structure has a low radiative recombination current due in part to its low photon energy and also to differences in conduction and valence band densities of states and less inhomogeneous broadening relative to GaInNAs. We speculate that Sb brings benefits as a surfactant producing more homogeneous wells so Sb may also be beneficial in structures at shorter wavelength. However, there is a large nonradiative current in GaInNAsSb and achieving further reductions in the non-radiative current is the major challenge in taking advantage of the good gain potential of this system.

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“…Although they succeeded in making excellent edge-emitting LDs, they could not make VCSELs because GaInNAs should be grown over an AlAs/GaAs DBR. Bank et al used an MBE system with dual growth chambers [37]. One chamber was used for growing GaInNAs, and the other was for growing AlGaAs.…”

Section: Solutionmentioning

confidence: 99%

High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

Kondow

Ishikawa

2012

Advances in Optical Technologies

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GaInNAs was proposed and created in 1995. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material with a bandgap energy that corresponds to near infrared. By combining GaInNAs with GaAs, an ideal band lineup for laser-diode application is achieved. This paper presents the reproducible growth of high-quality GaInNAs by molecular beam epitaxy. Examining the effect of nitrogen introduction and its correlation with impurity incorporation, we find that Al is unintentionally incorporated into the epitaxial layer even though the Al cell shutter is closed, followed by the concomitant incorporation of O and C. A gas-phase-scattering model can explain this phenomenon, suggesting that a large amount of N 2 gas causes the scattering of residual Al atoms with occasional collisions resulting in the atoms being directed toward the substrate. Hence, the reduction of the sublimated Al beam during the growth period can suppress the incorporation of unintentional impurities, resulting in a highly pure epitaxial layer.

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Recent Progress on 1.55-$\mu{\hbox {m}}$ Dilute-Nitride Lasers

Cited by 91 publications

References 84 publications

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

Optical Gain in GaInNAs and GaInNAsSb Quantum Wells

High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

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Recent Progress on 1.55-$\mu{\hbox {m}}$ Dilute-Nitride Lasers

Cited by 91 publications

References 84 publications

Charge separation and temperature-induced carrier migration in Ga1−xInxNNuytten1, Hayne2, Bansal3 et al. 2011Phys. Rev. B

Charge separation and temperature-induced carrier migration in Ga1−xInxNNuytten1, Hayne2, Bansal3 et al. 2011Phys. Rev. B

Optical Gain in GaInNAs and GaInNAsSb Quantum Wells

High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

Contact Info

Product

Resources

About

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B