Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)

Zhao, Weisheng; Wang, ZhaoHao; Peng, Shouzhong; Wang, Lezhi; Chang, Liang; Zhang, Youguang

doi:10.1360/sspma2016-00185

Sci. Sin.-Phys. Mech. Astron.

2016

DOI: 10.1360/sspma2016-00185

|View full text |Cite

Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)

Weisheng Zhao¹,

ZhaoHao Wang²,

Shouzhong Peng³

et al.

Abstract: An overview of resistive random access memory devices Chinese Science Bulletin 56, 3072 (2011); Micromagnetic modeling of magnetization dynamics driven by spin-transfer torque in magnetic nanostructures

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2020

2023

Publication Types

Select...

Article5

Relationship

Self Cite1

Independent4

Authors

Journals

Cited by 15 publications

References 89 publications

(117 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

Neuromorphic Engineering for Hardware Computational Acceleration and Biomimetic Perception Motion Integration

Wang

Chen

Huang

et al. 2020

Advanced Intelligent Systems

View full text Add to dashboard Cite

Figure 4. CBRAM-based artificial synapses. a) A conceptual schematic of Ag-SiGe-Si CBRAM during switching. Reproduced with permission. [107] Copyright 2018, Springer Nature. b) Resistive switching characteristics of Ag/CrPS 4 /Au CBRAM. The inset is the schematic diagram of the device. c) The experiment data of LRS retention and the fitting curve of the result with exponential decay function. Reproduced under the terms of the Creative Commons Attribution 4.

show abstract

Neuromorphic Engineering for Hardware Computational Acceleration and Biomimetic Perception Motion Integration

Wang

Chen

Huang

et al. 2020

Advanced Intelligent Systems

View full text Add to dashboard Cite

show abstract

Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer

Wang

Cai

Cao

et al. 2021

Sci. China Inf. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

Neuromorphic terahertz imaging based on carbon nanotube circuits

Yang

Wang

et al. 2023

Sci. China Inf. Sci.

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)

Abstract: An overview of resistive random access memory devices Chinese Science Bulletin 56, 3072 (2011); Micromagnetic modeling of magnetization dynamics driven by spin-transfer torque in magnetic nanostructures

Cited by 15 publications

References 89 publications

Neuromorphic Engineering for Hardware Computational Acceleration and Biomimetic Perception Motion Integration

Neuromorphic Engineering for Hardware Computational Acceleration and Biomimetic Perception Motion Integration

Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer

Neuromorphic terahertz imaging based on carbon nanotube circuits

Contact Info

Product

Resources

About